1.

Conference Proceedings
Conference Proceedings
1. Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
Li, N.Y ; Chang, P C. ; Baca, A.G. ; Laroche, J.R. ; Ren, F ; Annou, E. ; Sharps, P R. ; Hou, H.Q.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.69-81,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
2.

Conference Proceedings
Conference Proceedings
2. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Chang, P.C. ; Li, N.Y. ; Baca, A.G. ; Monie, C. ; Larnche, J.R. ; Hou, H.Q. ; Ren, F ; Pearton, S.J.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.192-197,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18