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10 results

Conference Proceedings

1. Solar-blind Alx Ga1-x N p-i-n photodetectors grown on LEO and non-LEO GaN

Sandvik,P.M. ; Walker,D. ; Kung,P. ; Mi,K. ; Shahedipour,F. ; Kumar,V. ; Zhang,X. ; Diaz,J. ; Jelen,C.L. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.265-272, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

2. High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates

Razeghi,M. ; Kung,P. ; Walker,D. ; Hamilton,M. ; Diaz,J.

Pub. info.:	Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland. pp.14-20, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3725

Conference Proceedings

3. Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monollthic integration with Si-based readout-integrated circultry for low cost and high performance

Razeghi,M. ; Erdtmann,M. ; Jelen,C.L. ; Diaz,J. ; Guastavinos,F. ; Brown,G.J. ; Park,Y.S.

Pub. info.:	Infrared technology and applications XXVI : 30 July - 3 August 2000, San Diego, USA. pp.335-347, 2000. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4130

Conference Proceedings

4. AlxGa1-xN p-i-n photodiodes on sapphire substrates

Walker,D. ; Kung,P. ; Sandvik,P. ; Wu,J.-J. ; Hamilton,M. ; Lee,I.-H. ; Diaz,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.193-198, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

Conference Proceedings

5. Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Kung,P. ; Walker,D. ; Sandvik,P. ; Hamilton,M. ; Diaz,J. ; Lee,I.-H. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.223-229, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

Conference Proceedings

6. High-power InAsSb/InAsSbP laser diodes emitting at 3-to 5-ｦﾌm range

Razeghi,M. ; Diaz,J. ; Yi,H.J. ; Wu,D. ; Lane,B. ; Rybaltowski,A. ; Xiao,Y.H. ; Jeon,H.

Pub. info.:	Integrated Optics Devices: Potential for Commercialization. pp.14-24, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2997

Conference Proceedings

7. Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

Wang,L.J. ; Wu,S.L. ; Diaz,J. ; Eliashevich,I. ; Yi,H.J. ; Razeghi,M.

Pub. info.:	Semiconductor Lasers II. pp.114-117, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2886

Conference Proceedings

8. Temperature insensitivity of the Al-free InGaAsP lasers for ｦﾋ=808 and 980 nm

Razeghi,M. ; Yi,H. ; Diaz,J. ; Kim,S. ; Erdtmann,M.

Pub. info.:	In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared. pp.243-253, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3001

Conference Proceedings

9. Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition (Invited Paper)

Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Rybaltowski,A. ; Xiao,Y. ; Yi,H.J. ; Diaz,J.

Pub. info.:	In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II. pp.113-121, 1998. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3284

10.

Conference Proceedings

10. 980-nm GaInAs/GaAsIGaInP QW high-power lasers

Wang,L. ; Wu,S. ; Liu,Y. ; Ning,Y. ; Diaz,J. ; Eliashevich,I. ; Yi,H.J. ; Razeghi,M.

Pub. info.:	Semiconductor Lasers III. pp.102-104, 1998. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3547

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