1.

Conference Proceedings
Conference Proceedings
1. Optimization and Realization of Sub 100nm Channel Length Lateral Asymmetric Channel P-MOSFETS
Hemkar,M. ; Vasi,J. ; Rao,V.Ramgopal ; Cheng,B. ; Woo,J.C.S.
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.584-587,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
2.

Conference Proceedings
Conference Proceedings
2. Dynamic Threshold Voltage MOSFETs for Future Low Power Sub 1V CMOS Applications
Suryagandh,Sushant S. ; Anand,B. ; Desai,M.P. ; Rao,V.Ramgopal
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.655-658,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
3.

Conference Proceedings
Conference Proceedings
3. Localized Charge Injection-A Tool to Investigate Plasma Damage in CMOS Devices
Viswanathan,C.R. ; Rao,V.Ramgopal ; Brozek,T.
Pub. info.: Physics of - Semiconductor Devices -.  Part 2  pp.980-985,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
4.

Conference Proceedings
Conference Proceedings
4. ULSI MOS Transistors with Jet Vapour Deposited(JVD)Silicon Nitride for the Gate Insulator
Mahapatra,S. ; Manjularani,K.N. ; Rao,V.Ramgopal ; Vasi,J.
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part2  pp.803-810,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
5.

Conference Proceedings
Conference Proceedings
5. Performance Trade-offs by the use of High-K Gate Dielectrics in Sub 100 nm Channel Length MOSFETs
Sharma,Sharad ; Rao,V.Ramgopal
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part2  pp.896-899,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
6.

Conference Proceedings
Conference Proceedings
6. Low Temperature Hot-Wire CVD Nitrides for Deep Sub-Micron CMOS Technologies
Patil,Samadhan B. ; Vaidya,Sangeeta ; Kumbhar,Alka ; Dusane,R.O. ; Chandorkar,A.N. ; Rao,V.Ramgopal
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part2  pp.879-882,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
7.

Conference Proceedings
Conference Proceedings
7. Alternative Gate Insulators for Deep Sub-Micron Channel Length MOSFETs
Rao,V.Ramgopal ; Eisele,I. ; Grabolla,T.
Pub. info.: Semiconductor Devices.  pp.54-56,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733