1.

Conference Proceedings
Conference Proceedings
1. Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
Monemar, B. ; Bergman, J. P. ; Dalfors, J. ; Pozina, G. ; Sernelius, B. E. ; Holtz, P. O. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G2.5.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells
Monemar, B. ; Paskov, P.P. ; Bergman, J.P. ; Pozina, G. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.501-508,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
3.

Conference Proceedings
Conference Proceedings
3. Radiative Recombination in InGaN/GaN Multiple Quantum Wells
Bergman, J. P. ; Monemar, B. ; Pozina, G. ; Sernelius, B. E. ; Holtz, P. O. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1571-1574,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Bergman, J.P. ; Pozina, G. ; Monemar, B. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1493-1496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Photoluminescence and Electroluminescence Characterization of InxGa1-xN/InyGa1-yN Multiple Quantum Well Light Emitting Diodes
Bergman, J.P. ; Pozina, G. ; Monemar, B. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1493-1496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
Pozina, G. ; Bergman, J.P. ; Monemar, B. ; Iwaya, M. ; Nitta, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.791-794,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356