1.

Conference Proceedings
Conference Proceedings
1. GROWN-IN MICRODEFECT DISTRIBUTION IN DOPED SILICON CRYSTALS
Borioneui, G. ; Gambaro, D. ; Porrini, M. ; Voronkov, V.V.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.505-516,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. INFLUENCE OF POLYSILICON AND CRUCIBLE PURITY ON THE MINORITY CARRIER RECOMBINATION LIFETIME OF CZOCHRALSKI SILICON CRYSTALS
Borionetti, G. ; Porrini, M. ; Geranzani, P. ; Orizio, R. ; Falster, R.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.104-110,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
3.

Conference Proceedings
Conference Proceedings
3. Long-Time Relaxation of Silicon Resistivity after Annihilation of Thermal Donors
Voronkova, G.I. ; Batunina, A.V. ; Voronkov, V.V. ; Falster, R. ; Porrini, M.
Pub. info.: High purity silicon VIII : proceedings of the international symposium.  pp.275-285,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-05
4.

Conference Proceedings
Conference Proceedings
4. Minority Carrier Diffusion Length Changes in Si Substrate Due to a High Temperature Annealing
Bellutti, P. ; Calderara, M. ; Porrini, M. ; Cornara, M. ; Olmo, M.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.304-312,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
5.

Conference Proceedings
Conference Proceedings
5. High Sensitivity Measurement of Nitrogen in Czochralski Silicon
Porrini, M. ; Pretto, M.G. ; Scala, R. ; Voronkov, V.V.
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah.  pp.75-82,  2003.  Pennington, NJ.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5133
6.

Conference Proceedings
Conference Proceedings
6. STUDY OF THE STACKING FAULT NUCLEI GENERATION/ DISSOLUTION TEMPERATURES ON CZ SILICON WAFERS AND ITS DEPENDENCE ON THE CRYSTAL POSITION
Porrini, M. ; Borionetti, G. ; Ferrero, G.
Pub. info.: Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing.  pp.16-25,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-15
7.

Conference Proceedings
Conference Proceedings
7. High Sensitivity Measurement of Nitrogen in Czochralski Silicon
Porrini, M. ; Pretto, M.G. ; Scala, R. ; Voronkov, V.V.
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah.  pp.75-82,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-3
8.

Conference Proceedings
Conference Proceedings
8. GROWN-IN MICRODEFECT DISTRIBUTION IN DOPED SILICON CRYSTALS
Borioneui, G. ; Gambaro, D. ; Porrini, M. ; Voronkov, V.V.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.505-516,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
9.

Conference Proceedings
Conference Proceedings
9. Influence of Oxygen and Oxygen Related Defects on the Minority Carrier Lifetime of High Purity CZ and MCZ Silicon
Porrini, M. ; Gambaro, D. ; Geranzani, P. ; Falster, R.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.170-179,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
10.

Conference Proceedings
Conference Proceedings
10. Investigation on Low Density Defects in Czochralski Silicon Crystals: Their Detectability, Formation Kinetics and Influence on Gate Oxide Integrity
Borionetti, G. ; Godio, P. ; Porrini, M. ; Ilic, S.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.160-169,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13