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Conference Proceedings

1. Electronic nature of neutral zinc in silicon:FTIR-absorption,uniaxial stress measurements

Kaufmann,B. ; Dornen,A. ; Lang,M. ; Pensl,G. ; Grilnebaum,D. ; Stolwijk,N.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.197-202, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

2. Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500｡？in Czochralski-Grown Si

Gotz,W. ; Pensl,G. ; Zulehner,W.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.213-218, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

3. High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface

Mattern,B. ; Bassler,M. ; Pensl,G. ; Ley,L.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.375-378, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

4. The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers

Newman,R.C. ; Davidson,B.R. ; Addinall,R. ; Murray,R. ; Emmert,J.W. ; Wagner,J. ; Gotz,W. ; Roos,G. ; Pensl,G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.229-234, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

5. Hall Effect,DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs

Roos,G. ; Schbner,A. ; Pensl,G. ; Krambrock,K. ; Meyer,B.K. ; Spaeth,J.-M. ; Wagner,J.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.951-956, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

6. Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

Gotz,W. ; Schoner,A. ; Pensl,G. ; Suttrop,W. ; Choyke,W.J. ; Stein,R. ; Leibenzeder,S.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.495-500, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

7. Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC

Itoh,H. ; Troffer,T. ; Pensl,G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.685-688, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy

Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.681-684, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Muller,St.G. ; Eckstein,R. ; Hartung,W. ; Hofmann,D. ; Kolbl,M. ; Pensl,G. ; Schmitt,E. ; Schmitt,E.J. ; Weber,A.-D. ; Winnacker,A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.33-36, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Oxygen-Related Defect Centers in 4H Silicon Carbide

Dalibor,T. ; Pensl,G. ; Yamamoto,T. ; Kimoto,T. ; Matsunami,H. ; Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.553-556, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

11.

Conference Proceedings

11. Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC

Kinoshita,T. ; Itoh,K.M. ; Muto,J. ; Schadt,M. ; Pensl,G. ; Takeda,K.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.295-298, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

12.

Conference Proceedings

12. Dn Revisited in an Modern Guise-6H and 4H SiC

Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J. ; Dalibor,T. ; Pensl,G. ; Kimoto,T.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.493-496, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

13.

Conference Proceedings

13. Ground States of the Ionized Isoelectronic Ti Acceptor in SiC

Dalibor,T. ; Pensl,G. ; Nordeil,N. ; Schdner,A. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.537-540, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

14.

Conference Proceedings

14. Nitrogen-Carbon-Oxygen Radiative Centers in Silicon:Uniaxial Stress Measurements

Ddrnen,A. ; Sauer,R. ; Pensl,G.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.631-636, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

15.

Conference Proceedings

15. Nitrogen Donors,Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide(4H-SiC)

Gotz,W. ; Schoner,A. ; Suttrop,W. ; Pensl,G. ; Choyke,W.J. ; Stein,R.A. ; Leibenzeder,S.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.69-74, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

16.

Conference Proceedings

16. Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

Troffer,T. ; Pensl,G. ; Schoner,A. ; Henry,A. ; Hallin,C. ; Kordina,O. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.557-560, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

17.

Conference Proceedings

17. Cadmium-related defects in silicon:electron-paramagnetic resonance identification

Gehlhoff,W. ; Naser,A. ; Lang,M. ; Pensl,G.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.423-428, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

18.

Conference Proceedings

18. Vacancy Related Metastable Defects in III-V Semiconductors-A Study of the EL2 and DX Center by Positron Annihilation,Photoconductivity and Infrared Spectroscopy

Krause-Rehberg,R. ; Polity,A. ; Drost,Th. ; Roos,G. ; Pensl,G. ; Volm,D. ; Meyer,B.K.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1099-1104, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

19.

Conference Proceedings

19. Electrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon

Haｦﾂler,C. ; Pensl,G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.123-128, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

20.

Conference Proceedings

20. EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon

Meilwes,N. ; Spaeth,J.-M. ; Emtsev,V.V. ; Oganesyan,G.A. ; Gotz,W. ; Pensl,G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.141-146, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

21.

Conference Proceedings

21. NITROGEN-CARBON INTERACTION IN OPTICAL DEFECTS IN SILICON

Dornen,A. ; Sauer, R. ; Pensl,G.

Pub. info.:	Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.. pp.545-552, 1986. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	59

22.

Conference Proceedings

22. Interface State Density at Implanted 6H SiC/SiO2 MOS Structures

Bassler,M. ; Afanas'ev,V.V. ; Pensl,G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.861-864, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

23.

Conference Proceedings

23. Optical Properties of Silicon Carbide:Some Recent Developments

Devaty,R.P. ; Choyke,W.J. ; Sridhara,S.G. ; Clemen,L.L. ; Nizhner,D.G. ; Larkin,D.J. ; Troffer,T. ; Pensl,G. ; Kimoto,T. ; Kong,H.S.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.455-460, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

24.

Conference Proceedings

24. Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC

Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J. ; Troffer,T. ; Pensl,G. ; Larkin,D.J. ; Kong,H.S.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.461-464, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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