1.

Conference Proceedings
Conference Proceedings
1. Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC
Gotz,W. ; Schoner,A. ; Pensl,G. ; Suttrop,W. ; Choyke,W.J. ; Stein,R. ; Leibenzeder,S.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.495-500,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
2.

Conference Proceedings
Conference Proceedings
2. Oxygen-Related Defect Centers in 4H Silicon Carbide
Dalibor,T. ; Pensl,G. ; Yamamoto,T. ; Kimoto,T. ; Matsunami,H. ; Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.553-556,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Dn Revisited in an Modern Guise-6H and 4H SiC
Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J. ; Dalibor,T. ; Pensl,G. ; Kimoto,T.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.493-496,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
Dalibor,T. ; Pensl,G. ; Nordeil,N. ; Schdner,A. ; Choyke,W.J.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.537-540,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Nitrogen Donors,Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide(4H-SiC)
Gotz,W. ; Schoner,A. ; Suttrop,W. ; Pensl,G. ; Choyke,W.J. ; Stein,R.A. ; Leibenzeder,S.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.69-74,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
6.

Conference Proceedings
Conference Proceedings
6. Optical Properties of Silicon Carbide:Some Recent Developments
Devaty,R.P. ; Choyke,W.J. ; Sridhara,S.G. ; Clemen,L.L. ; Nizhner,D.G. ; Larkin,D.J. ; Troffer,T. ; Pensl,G. ; Kimoto,T. ; Kong,H.S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.455-460,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
7.

Conference Proceedings
Conference Proceedings
7. Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J. ; Troffer,T. ; Pensl,G. ; Larkin,D.J. ; Kong,H.S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.461-464,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268