1.

Conference Proceedings
Conference Proceedings
1. PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate
Polychroniadis, E. K. ; Mantzari, A. ; Freudenberg, A. ; Wollweber, J. ; Nitschke, R. ; Frank, T. ; Pensl, G. ; Schoner, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.319-322,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method
Sadowski, H. ; Schulze, N. ; Frank, T. ; Laube, M. ; Pensl, G. ; Helbig, R.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.401-404,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
Frank, T. ; Weidner, M. ; Itoh, H. ; Pensl, G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.439-442,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC
Frank, T. ; Pensl, G. ; Bai, S. ; Devaty, R. P. ; Choyke, W. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.753-756,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC
Schmid, F. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.641-644,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Physics of SiC Processing
Pensl, G. ; Afanas'ev, V. V. ; Bassler, M. ; Frank, T. ; Laube, M. ; Weidner, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.831-836,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. ; Uedono, A. ; Itoh, H. ; Yoshikawa, M. ; Kojima, K. ; Okada, S. ; Nashiyama, I. ; Abe, K. ; Tanigawa, S. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.857-860,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
Kawasuso, A. ; Weidner, M. ; Redmann, F. ; Frank, T. ; Krause-Rehberg, R. ; Pensl, G. ; Sperr, P. ; Triftshauser, W. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.489-492,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
Kawasuso, A. ; Redmann, F. ; Krause-Rehberg, R. ; Sperr, P. ; Frank, T. ; Weidner, M. ; Pensl, G. ; Itoh, H.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.537-542,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation
Kawasuso, A. ; Yoshikawa, M. ; Maekawa, M. ; Itoh, H. ; Chiba, T. ; Redmann, F. ; Krause-Rehberg, R. ; Weidner, M. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.477-480,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436