Hall Effect in the Channel of 3C-SiC MOSFETS

Hall Effect in the Channel of 3C-SiC MOSFETS

Author(s):

Krieger, M.

Publication title:

Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy

Title of ser.:

Materials science forum

Ser. no.:

483-485

Pub. Year:

2005

Page(from):

441

Page(to):

444

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499632 [0878499636]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00014242
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2004 : 5th
Conf. info. (Venue):	Bologna, Italy
Conf. info. (Date):	2004.08.31-2004.09.04

Similar Items:

1 Conference Proceedings Realization of Large Area 3C-SiC MOSFETs Schoner, A., Bakowski, M., Ericsson, P., Stromberg, H., Nagasawa, H., Abe, M. Trans Tech Publications	7 Conference Proceedings Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, M. Abe Trans Tech Publications
2 Conference Proceedings Realization of Large Area Vertical 3C-SiC MOSFET Devices Schoner, A., Bakowski, M., Ericsson, P., Stromberg, H., Nagasawa, H., Abe, M. Trans Tech Publications	8 Conference Proceedings Vertical MOSFET Devices Fabricated on 3C-SiC With High and Low Material Quality Adolf Schoner, Mietek Bakowski, Per Ericsson, Helena Stromberg, Hiroyuki Nagasawa, Masayuki Abe Materials Research Society
3 Conference Proceedings Thermally-Assisted Tunneling Model for 3C-SiC p⁺-n Diodes B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications	9 Conference Proceedings High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility H. Uchida, A. Minami, T. Sakata, H. Nagasawa, M. Kobayashi Trans Tech Publications
4 Conference Proceedings Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects B. Zippelius, M. Krieger, H.B. Weber, G. Pensl, H. Nagasawa Trans Tech Publications	10 Conference Proceedings SiC Epi-Channel Lateral MOSFETs C.T. Yen, M. Bakowski, C.C. Hung, S. Reshanov, A. Schöner Trans Tech Publications
5 Conference Proceedings Growth of 3C-SiC Bulk Material by the Modified Lely Method Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Puesche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P. Trans Tech Publications	11 Conference Proceedings Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect Laube, M., Pensl, G., Lee, K.K., Ohshima, T. Trans Tech Publications
6 Conference Proceedings Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs K.K. Lee, M. Laube, T. Ohshima, H. Itoh, G. Pensl Trans Tech Publications	12 Conference Proceedings Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length B. Zippelius, M. Hauck, S. Beljakowa, H.B. Weber, M. Krieger Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12