1.

Conference Proceedings
Conference Proceedings
1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS
Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.451-458,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
2.

Conference Proceedings
Conference Proceedings
2. GaAs QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE
Hobson, W.S. ; Zussman, A. ; Levine, B.F. ; Pearton, S.J. ; Swaminathan, V. ; Luther, L.C.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.501-506,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
3.

Conference Proceedings
Conference Proceedings
3. TEMPERATURE DEPENDENCE OF ETCH RATE AND RESIDUAL DAMAGE IN REACTIVELY ION ETCHED GaAs AND A1GaAs
Pearton, S.J. ; Jones, K.S. ; Chakabarti, U.K. ; Emerson, B. ; Lane, E. ; Vasile, M.J. ; Fullowan, T.R. ; Hobson, W.S. ; Short, K.T. ; Haegel, N.M.
Pub. info.: Laser and particle-beam chemical processes on surfaces : symposium held November 29-December 2, 1988, Boston, Massachusetts, U.S.A..  pp.489-494,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 129
4.

Conference Proceedings
Conference Proceedings
4. REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES
Pearton, S.J. ; Chakrabarti, U.K. ; Baiocchi, F.A. ; Hobson, W.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.417-424,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
5.

Conference Proceedings
Conference Proceedings
5. THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE
Abernathy, C.R. ; Song, J. ; Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Bohling, D.A. ; Muhr, G.T.
Pub. info.: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.183-194,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 204
6.

Conference Proceedings
Conference Proceedings
6. Lateral AlxGal-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage
Zhang, A.P. ; Johnson, J.W. ; Ren, F. ; Han, J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Redwing, J.M. ; Lee, K.P. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.167-172,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
7.

Conference Proceedings
Conference Proceedings
7. High Performance Small Area Contact GaN/AlGaN HBTs
Lee, K.P. ; Zhang, A.P. ; Ren, F. ; Han, J. ; Hobson, W.S. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.161-166,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
8.

Conference Proceedings
Conference Proceedings
8. Surface Preparation and Oxide Growth for GaN MOSFETs*
Gila, B.P. ; Johnson, J.W. ; Lee, K.N. ; Krishnamoorthy, V. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.71-83,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
9.

Conference Proceedings
Conference Proceedings
9. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
10.

Conference Proceedings
Conference Proceedings
10. The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
Kang, B.S. ; Kim, S. ; Kim, J. ; Ren, F. ; Baik, K. ; Pearton, S.J. ; Gila, B.P. ; Abernathy, C.R. ; Pan, C.-C. ; Chen, G.-T. ; Chyi, J.-I. ; Chandrasekaran, V. ; Sheplak, M. ; Nishida, T. ; Chu, S.N.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.292-297,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
11.

Conference Proceedings
Conference Proceedings
11. GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Kim, Jihyun ; Kang, B.S. ; LaRoche, J.R. ; Ren, F ; Pan, C.-C. ; Chen, G.T. ; Chyi, J.-I. ; Park, S.S. ; Park, Y.J. ; Gila, B.P. ; Abernathy, C.R. ; Balk, K.H. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.306-320,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
12.

Conference Proceedings
Conference Proceedings
12. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
13.

Conference Proceedings
Conference Proceedings
13. Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R. ; Gila, B.P. ; Onstine, A.H. ; Pearton, S.J. ; Kim, J. ; Luo, B. ; Mehandru, R. ; Ran, F. ; Gillespie, J.K. ; Fitch, R.C. ; Sewell, J. ; Dettmer, R. ; Via, G.D. ; Crespo, A. ; Jenkins, T.J. ; Irokawa, Y.
Pub. info.: Dielectrics in emerging technologies : proceedings of the international symposium.  pp.330-341,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-1
14.

Conference Proceedings
Conference Proceedings
14. Deuterium Introduction Into 6H and 3C-SiC Crystals and Thermal Stability with Annealing
Zavada, J.M. ; Wilson, R.G. ; Pearton, S.J. ; Lee, B.K. ; Steckl, A.J.
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium.  pp.100-107,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-17
15.

Conference Proceedings
Conference Proceedings
15. Performance of Intra-Cavity Contacted, Shallow Implant Apertured Vertical-Cavity Surface Emitting Lasers *
Hobson, W.S. ; Lopata, J. ; Chirovsky, L.M.F. ; Chu, S.N.G. ; Dang, G. ; Ren, F. ; Tayahi, M.B. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.265-272,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
16.

Conference Proceedings
Conference Proceedings
16. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
17.

Conference Proceedings
Conference Proceedings
17. The Effect Of Er Concentration On the Morphology and Photoluminescence of GaN:Er
Overberg, M. ; Brand, J. ; MacKenzie, J.D. ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.195-200,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
18.

Conference Proceedings
Conference Proceedings
18. Effects of N2 or Ar Plasma Exposure on GaAs/AlGaAs Heterojunction Bipolar Transistors *
Hsu, C.H. ; Chen, C.C. ; Ren, B.Luo.F. ; Pearton, S.J. ; Abernathy, C.R. ; Lee, J.W. ; Mackenzie, K.D. ; Sasserath, J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.241-249,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
19.

Conference Proceedings
Conference Proceedings
19. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors
Chang, P.C. ; Li, N.Y. ; Baca, A.G. ; Monie, C. ; Larnche, J.R. ; Hou, H.Q. ; Ren, F ; Pearton, S.J.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.192-197,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
20.

Conference Proceedings
Conference Proceedings
20. The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Lambers, E. ; Pearton, S.J.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.238-244,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
21.

Conference Proceedings
Conference Proceedings
21. Study of Radiation Induced Resistance Mechanisms in GaAs MESFET and TLM Structures
Luo, B. ; Schoenfeld, D. ; Johnson, W.J. ; Pearton, S.J. ; Ren, F.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.250-257,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
22.

Conference Proceedings
Conference Proceedings
22. The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs
Luo, B. ; Trivedi, V.P. ; Ren, F. ; Hsu, C.H. ; Pearton, S.J. ; Abernathy, C.R. ; Cao, X. ; Wu, C.S. ; Hoppe, M. ; Sasserath, J. ; Lee, J.W.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.158-170,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
23.

Conference Proceedings
Conference Proceedings
23. p-Ohmic Contact Study for Intra-Cavity Contacts in AlGaAs/GaAs VCSELs
Luo, B. ; Dang, G. ; Zhang, A.-P. ; Ren, F. ; Lopata, J. ; Chu, S.N.G. ; Hobson, W.S ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.232-240,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
24.

Conference Proceedings
Conference Proceedings
24. SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors
Johnson, J.W. ; Gila, B.P. ; Luo, B. ; Lee, K.P. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I. ; Nee, T.E. ; Lee, C.M. ; Chuo, C.C. ; Anderson, T.J. ; Ren, F.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.152-157,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
25.

Conference Proceedings
Conference Proceedings
25. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems
Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.201-212,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
26.

Conference Proceedings
Conference Proceedings
26. Hydrogen Incorporation into III-V Nitrides During Processing
Pearton, S.J. ; Shul, R.J. ; Wilson, R.G. ; Ren, F. ; Zavada, J.M. ; Abernathy, C.R. ; Vartuli, C.B. ; Lee, J.W. ; Mileham, J.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.178-186,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
27.

Conference Proceedings
Conference Proceedings
27. Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
Kim, J. ; Gila, B.P. ; Mehandnj, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.191-197,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
28.

Conference Proceedings
Conference Proceedings
28. ECR Etching of Group-III Nitride Binary and Ternary Films
Shul, R.J. ; Howard, A.J. ; Pearton, S.J. ; Abernathy, C.R. ; Variuli, C.B. ; Barnes, P.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.217-230,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
29.

Conference Proceedings
Conference Proceedings
29. III-N Based Dilute Magnetic Semiconductors for Spintronics Applications*
Park, Y.D. ; Lee, J.S. ; Lee, S.-Y. ; Khim, Z.G. ; Oh, E. ; Thaler, G.T. ; Overberg, M.E. ; Abernathy, C.R. ; Pearton, S.J. ; Kim, J.-H ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.22-27,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
30.

Conference Proceedings
Conference Proceedings
30. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
31.

Conference Proceedings
Conference Proceedings
31. Low Dit Dielectric/GaN MOS Systems
Hong, M. ; Ng, H.M. ; Kwo, J. ; Kortan, A.R. ; Baillargeon, J.N. ; Chu, S.N.G. ; Mannaerts, J.P. ; Cho, A.Y. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.103-109,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
32.

Conference Proceedings
Conference Proceedings
32. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar
Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.203-213,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
33.

Conference Proceedings
Conference Proceedings
33. High-Rate Etching of Metals for Magnetoelectronic Applications
Pearton, S.J. ; Jung, K.B. ; Hong, J. ; Lee, J.W. ; Caballero, J.A. ; Childress, J.R. ; Jenson, M. ; Hurst, A.T., Jr.
Pub. info.: Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII).  pp.270-285,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-21
34.

Conference Proceedings
Conference Proceedings
34. Evaluation of Erbium Doped III-Nitride Semiconductors for Optoelectronic Applications
Hoemmerich, U. ; Thaik, M. ; Zavada, J.M. ; Schwartz, R.N. ; Wilson, R.G. ; Pearton, S.J. ; Abernathy, C.R. ; MacKenzie, J.D.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.110-118,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
35.

Conference Proceedings
Conference Proceedings
35. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
36.

Conference Proceedings
Conference Proceedings
36. High temperature Stable W and WSi contacts on n- and p-GaN
Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Zeitouny, A. ; Eisenber, M. ; Zopler, J.C. ; Abernathy, C.R. ; Han, J. ; Shul, R.J. ; Lothian, J.R.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.208-214,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
37.

Conference Proceedings
Conference Proceedings
37. Annealing Behavior of Ar Implanted GaN
Luo, B. ; Johnson, J.W. ; Ren, F. ; Allums, K.K. ; Abernathy, C.R. ; Pearton, S.J. ; Dwivedi, R. ; Fogarty, TN ; Wilkins, R. ; Dabiran, A.M ; Wowchack, A.M. ; Polley, C.J. ; Chow, P.P. ; Baca, A.G.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.198-206,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
38.

Conference Proceedings
Conference Proceedings
38. ACTIVATION AND INTERDIFFUSION CHARACTERISTICS IN IMPLANTED GaAs-A1GaAs HETEROSTRUCTURES ON Si
Pearton, S.J. ; Short, K.T. ; Jones, K.S. ; Vernon, S.M.
Pub. info.: Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.97-104,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 126
39.

Conference Proceedings
Conference Proceedings
39. PROPERTIES OF Pt/Ti CONTACTS TO III-V MATERIALS
Katz, A. ; Nakahara, S. ; Chu, S.N.G. ; Weir, B.E. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Savin, W.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.305-312,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
40.

Conference Proceedings
Conference Proceedings
40. ION MILLING DAMAGE IN InP AND GaAs
Pearton, S.J. ; Chakrabarti, U.K. ; Perley, A.P.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.507-512,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
41.

Conference Proceedings
Conference Proceedings
41. DRY ETCHING TECHNIQUES AND CHEMISTRIES FOR III-V SEMICONDUCTORS
Pearton, S.J.
Pub. info.: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.277-290,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 216
42.

Conference Proceedings
Conference Proceedings
42. AIGaN Power Rectifiers *
Pearton, S.J. ; Kim, J. ; Ren, F. ; Baik, K ; Gila, B.P. ; Abernathy, C.R. ; Irokawa, Y. ; Chyi, J-I. ; Park, S.S. ; Park, Y.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.180-207,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
43.

Conference Proceedings
Conference Proceedings
43. DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates
Irokawa, Y. ; Luo, B. ; Ren, F. ; Pan, C-C. ; Chen, G.-T. ; Chyi, J.I. ; Park, S.S. ; Park, Y.J. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.214-222,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
44.

Conference Proceedings
Conference Proceedings
44. Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation
Ren, F. ; LaRoche, J. ; Anderson, T. ; Pearton, S.J. ; Lee, J.W. ; Johnson, D. ; Lothian, J.R. ; Lin, J. ; Weiner, J.S. ; Shul, R.J. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.513-519,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
45.

Conference Proceedings
Conference Proceedings
45. Electrical and Optical Properties of C, O and H in III-V Nitrides
Pearton, S.J. ; Lee, J.W. ; Abernathy, C.R. ; Wilson, R.G. ; Zavada, J.M. ; Zolper, J.C.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.209-219,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
46.

Conference Proceedings
Conference Proceedings
46. ION IMPLANT ACTIVATION AND REDISTRIBUTION IN AlXGa1-XAs
Pearton, S.J. ; Hobson, W.S. ; Von Neida, A.E. ; Haegel, N.M. ; Jones, K.S. ; Morris, N. ; Sealy, B.J.
Pub. info.: Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.665-670,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 157
47.

Conference Proceedings
Conference Proceedings
47. ION BEAM INDUCED INTERMIXING OF WSi0.45 oN GaAS
Pearton, S.J. ; Short, K.T. ; Jones, K.S. ; Baca, A.G. ; Wu, C.S.
Pub. info.: Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A..  pp.249-254,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 128
48.

Conference Proceedings
Conference Proceedings
48. CHARACTERIZATION OF MODULATION DOPED PSEUDOMORPHIC A1GaAs/InGaAs/GaAs HEMT STRUCTURES BY ELECTRON BEAM ELECTROEREFLECTANCE AND PHOTOLUMINESCENCE
Herman, M.H. ; Ward, I.D. ; Kopf, R.F. ; Pearton, S.J. ; Jones, E.D.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.661-666,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
49.

Conference Proceedings
Conference Proceedings
49. ULTRA?THIN p+ LAYERS IN GaAs
Short, K.T. ; Chakrabarti, U.K. ; Pearton, S.J.
Pub. info.: Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A..  pp.737-742,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 74
50.

Conference Proceedings
Conference Proceedings
50. HIGHLY RELIABLE WGe OHMIC CONTACT TO GaAs-AlGaAs HBTs
Fullowan, T.R. ; Ren, F. ; Tseng, B. ; Pearton, S.J. ; Abernathy, C.R. ; Harriott, L.R. ; Lane, E.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.239-246,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
51.

Conference Proceedings
Conference Proceedings
51. *ANOTHER STEP IN DEVELOPING A SINGLE WAFER INTEGRATED PROCESS: RAPID THERMAL LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION OF LOCAL DIFFUSED W(Zn) CONTACTS
Katz, A. ; Feingold, A. ; El-Roy, A. ; Moriya, N. ; Pearton, S.J. ; Rusby, A. ; Kovalchick, J. ; Abernathy, C.R. ; Geva, M. ; Lane, E.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.217-228,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
52.

Conference Proceedings
Conference Proceedings
52. TRI-LAYER LIFT-OFF METALLIZATION PROCESS USING LOW TEMPERATURE DEPOSITED SiNx
Lothian, J.R. ; Ren, F. ; Pearton, S.J. ; Chakrabarti, U.K. ; Abernathy, C.R. ; Katz, A.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.259-266,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
53.

Conference Proceedings
Conference Proceedings
53. GROWTH OF GaN, AIN AND InN BY ELECTRON CYCLOTRON RESONANCE-METAL ORGANIC MOLECULAR BEAM EPITAXY
Wisk, P.W. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Lothian, J.R. ; Katz, A. ; Jones, K.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.599-604,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
54.

Conference Proceedings
Conference Proceedings
54. Sn-H COMPLEX IN HYDROGEN PASSIVATED GaAs
Kozuch, D.M. ; Stavola, Michael J. ; Pearton, S.J. ; Abernathy, C.R. ; Lopata, J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.477-482,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
55.

Conference Proceedings
Conference Proceedings
55. SURFACE PROTECTION DURING PLASMA HYDROGENATION FOR ACCEPTOR PASSIVATION IN InPD
Lopata, J. ; Dautremont-Smith, W.C. ; Pearton, S.J. ; Lee, J.W. ; Ha, N.T. ; Luftman, H.S.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.501-510,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
56.

Conference Proceedings
Conference Proceedings
56. HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP
Swaminathan, V. ; Chakrabarti, U.K. ; Hobson, W.S. ; Caruso, R. ; Lopata, J. ; Pearton, S.J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.489-494,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
57.

Conference Proceedings
Conference Proceedings
57. ACCEPTOR DELTA-DOPING IN GaAs
Hobson, W.S. ; Pearton, S.J. ; Abernathy, C.R. ; Cabaniss, G.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.855-860,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
58.

Conference Proceedings
Conference Proceedings
58. GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD
Hobson, W.S. ; Pearton, S.J. ; Short, K.T. ; Jones, K.S. ; Vernon, S.M. ; Jacobson, D.C. ; Abernathy, C.R. ; Caruso, R.
Pub. info.: Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.147-154,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 116
59.

Conference Proceedings
Conference Proceedings
59. ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2
Pearton, S.J. ; Hobson, W.S. ; Jones, K.S.
Pub. info.: In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.425-430,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 158
60.

Conference Proceedings
Conference Proceedings
60. DEPOSITION OF LOW-STRESS ENCAPSULANTS ON InP AND GaAs
Chakrabarti, U.K. ; Pearton, S.J. ; Barz, H. ; Vonneida, A.R. ; Short, K.T. ; Lee, J.W.
Pub. info.: Photon, beam, and plasma stimulated chemical processes at surfaces : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A..  pp.691-696,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 75
61.

Conference Proceedings
Conference Proceedings
61. InGaP/GaAs BASED SINGLE AND DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS GROWN BY MOMBE
Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Wisk, P.W. ; Esagui, R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.33-38,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
62.

Conference Proceedings
Conference Proceedings
62. CHARACTERISTICS OF 56 MeV OXYGEN IMPLANTATION INTO Si AND III-V SEMICONDUCTORS
Pearton, S.J. ; Jalali, B. ; Poate, J.M. ; Fox, J.D. ; Kemper, K.W. ; Magee, C.W. ; Jones, K.S.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.271-276,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
63.

Conference Proceedings
Conference Proceedings
63. REDUCTION OF SIDEWALL ROUGHNESS DURING DRY ETCHING OF SiO2
Ren, F. ; Pearton, S.J. ; Lothian, J.R. ; Abernathy, C.R. ; Hobson, W.S.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.529-536,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
64.

Conference Proceedings
Conference Proceedings
64. DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs
Pearton, S.J. ; Ren, F. ; Katz, A. ; Chakrabarti, U.K. ; Lane, E. ; Hobson, W.S. ; Kopf, R.F. ; Abernathy, C.R. ; Wu, C.S. ; Bohling, D.A. ; Ivankovits, J.C.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.131-138,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
65.

Conference Proceedings
Conference Proceedings
65. IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS
Pearton, S.J. ; Chakrabarti, U.K. ; Katz, A. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Fullowan, T.R.
Pub. info.: Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A..  pp.123-130,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 282
66.

Conference Proceedings
Conference Proceedings
66. Anomalous Hall Effect in Wide Bandgap Diluted Magnetic Semiconductors Co-Doped With Non-Magnetic Impurities
Park, Y.D. ; Choi, H.K. ; Shim, S.B. ; Suh, K.S. ; Seo, S.S.A. ; Noh, T. W. ; SKim, Y. ; Lee, J.S. ; Khim, Z.G. ; Abernathy, C.R. ; Pearton, S.J. ; Zavada, J.M.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.300-311,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
67.

Conference Proceedings
Conference Proceedings
67. Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN *
Thaler, G.T. ; Overberg, M. ; Frazier, R. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Park, Y.D. ; Rairigh, R. ; Kelly, J. ; Lee, J.S. ; Theodoropoulou, N. ; Hebard, A.F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia.  pp.141-145,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-4
68.

Conference Proceedings
Conference Proceedings
68. Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges
Zolper, J.C. ; Pearton, S.J.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.76-82,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
69.

Conference Proceedings
Conference Proceedings
69. The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides
Vartuli, C.B. ; Pearton, S.J. ; Abernathy, C.R. ; Shul, R.J. ; Ren, F.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.39-56,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
70.

Conference Proceedings
Conference Proceedings
70. A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN
Cole, M.W. ; Eckart, D.W. ; Han, W.Y ; Pfeffer, R.L. ; Monahan, T. ; Ren, F. ; Yuan, C. ; Stall, R.A. ; Pearton, S.J. ; Li, Y. ; Lu, Y.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.187-197,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
71.

Conference Proceedings
Conference Proceedings
71. Investigation of Wet Chemical Etching of InGaAlP Alloys
Lee, J.W. ; Santana, C.J. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Wu, C.S.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.316-326,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
72.

Conference Proceedings
Conference Proceedings
72. Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source
Cole, M.W. ; Han, W.Y. ; Pfeffer, R.L. ; Eckart, D.W. ; Pang, S.W. ; Ko, K.K. ; Ren, F. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Caballero, J.A. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.293-306,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
73.

Conference Proceedings
Conference Proceedings
73. Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma
Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lothian, J.R. ; Lopata, J. ; Cole, M.W. ; Caballero, J.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.346-353,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
74.

Conference Proceedings
Conference Proceedings
74. Device Processing of Wide Bandgap Semiconductors - Challenges and Directions
Pearton, S.J. ; Ren, F. ; Shul, R.J. ; Zolper, J.C.
Pub. info.: Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI).  pp.138-161,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-1
75.

Conference Proceedings
Conference Proceedings
75. Design Investigation of InGaAsN-based Pnp Heteroj unction Bipolar Transistors *
Monier, C. ; Chang, P.C. ; Baca, A.G. ; Li, N.Y. ; Larache, J.R. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.293-299,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
76.

Conference Proceedings
Conference Proceedings
76. Orientation and Dielectric Overlayer Effects in InGaP/GaAs HBTs *
Baca, A.G. ; Monier, C. ; Chang, P.C. ; Armendariz, M.G. ; Briggs, R.D. ; Pearton, S.J.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.300-304,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
77.

Conference Proceedings
Conference Proceedings
77. Magnetron Reactive Ion Etching of III-V Nitride Semiconductors
McLane, G.F. ; Pearton, S.J. ; Abernathy, C.R.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.204-216,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
78.

Conference Proceedings
Conference Proceedings
78. *FERMI RESONANCE EFFECTS ON THE VIBRATION MODES OF HYDROGEN-PASSIVATED BORON IN SILICON
Watkins, G.D. ; Fowler, W.B. ; Deleo, G.G. ; Stavola, M. ; Kozuch, D.M. ; Pearton, S.J. ; Lopata, J.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.367-376,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
79.

Conference Proceedings
Conference Proceedings
79. Development of low temperature silicon nitride and silicon dioxide films by inductively-coupled plasma chemical vapor deposition
Lee, J.W. ; Mackenzie, K.D. ; Johnson, D. ; Pearton, S.J. ; Ren, F. ; Sasserath, J.N.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.69-79,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
80.

Conference Proceedings
Conference Proceedings
80. Wet and dry etching characteristics of electron beam deposited SiO and SiO2
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Pearton, S.J. ; Lambers, E.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.259-264,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
81.

Conference Proceedings
Conference Proceedings
81. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
82.

Conference Proceedings
Conference Proceedings
82. Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems
Hays, D.C. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Han, J. ; Shul, R.J. ; Cho, H. ; Jung, K.B. ; Ren, F. ; Hahn, Y.B.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.281-286,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
83.

Conference Proceedings
Conference Proceedings
83. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
Kim, J. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.653-658,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
84.

Conference Proceedings
Conference Proceedings
84. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.659-664,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
85.

Conference Proceedings
Conference Proceedings
85. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.335-340,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
86.

Conference Proceedings
Conference Proceedings
86. Wide Bandgap Materials for Semiconductor Spintronics
Pearton, S.J. ; Abernathy, C.R ; Thaler, G.T. ; Frazier, R. ; Norton, D.P. ; Kelly, J. ; Rairigh, R. ; Hebard, A.F. ; Park, Y.D. ; Zavada, J.M.
Pub. info.: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.287-298,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 799
87.

Conference Proceedings
Conference Proceedings
87. Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN
Kent, D. G. ; Lee, K.P. ; Zhang, A. P. ; Luo, B. ; Overberg, M.E. ; Abernathy, C. R. ; Ren, F. ; Mackenzie, K. D. ; Pearton, S.J. ; Nakagawa, Y.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
88.

Conference Proceedings
Conference Proceedings
88. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes
Allums, K. ; Luo, B. ; Mehandru, R. ; Gila, B.P. ; Dwivedi, R. ; Fogarty, T.N. ; Wilkins, R. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.713-718,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
89.

Conference Proceedings
Conference Proceedings
89. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
90.

Conference Proceedings
Conference Proceedings
90. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
Kim, Jihyun ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.699-712,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
91.

Conference Proceedings
Conference Proceedings
91. P-GaAs Base Regrowth For GaN HBTs And BJTs
Dang, Gerard ; Zhang, A.P. ; Cao, X.A. ; Ren, F. ; Pearton, S.J. ; Cho, H. ; Hobson, W.S. ; Lopata, J. ; Van Hove, J.M. ; Klaassen, J.J. ; Polley, C.J. ; Wowchack, A.M. ; Chow, P.P. ; King, D.J.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.13-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
92.

Conference Proceedings
Conference Proceedings
92. Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs
Lee, K.P. ; Zhang, A. P. ; Dang, G. ; Ren, F. ; Han, J. ; Chu, S. N. G. ; Hobson, W. S. ; Lopata, J. ; Abernathy, C. R. ; Pearton, S.J. ; Lee, J. W.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
93.

Conference Proceedings
Conference Proceedings
93. HYDROGEN PASSIVATION OF OXYGEN DONOR IN Si
Pearton, S.J. ; Chantre, A.M. ; Kimerling, L.C. ; Cumming,C.D. ; Dautmoth-Smith, W.C.
Pub. info.: Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A..  pp.475-480,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 59
94.

Conference Proceedings
Conference Proceedings
94. ELECTRICAL TRANPORT STUDIES OF THE HYDROGEN-RELATED COMPENSATION DONOR IN B-DOPED SILICON DIODES
Tavendale, A.J. ; Williams, A.A. ; Alexiev, D. ; Pearton, S.J.
Pub. info.: Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A..  pp.469-474,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 59
95.

Conference Proceedings
Conference Proceedings
95. The Use of GaN Based Electronic and Photonic Devices for Bio-Applications
Ren, F. ; Kang, B.S. ; Pearton, S.J. ; Norton, D.P. ; Kwon,Y.W. ; Baik, K.H. ; Louche, G. ; Duran, R.S. ; Gnanou, Y.
Pub. info.: State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia.  pp.211-225,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-04
96.

Conference Proceedings
Conference Proceedings
96. Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor
Gila, B. ; Onstine, A.H. ; Hlad, M ; Gerger, A. ; Herrero, A. ; Allums, K.K. ; Stodilka, D. ; Jang, S. ; Kang, S. ; Anderson, T. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia.  pp.247-261,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-04
97.

Conference Proceedings
Conference Proceedings
97. REACTIVE ION ETCHING OF III-V SEMICONDUCTORS USING HYDROGENATED CHLOROFLUOROCARBON MIXTURES
Pearton, S.J. ; Hobson, W.S. ; Chakrabarti, U.K. ; Derkits, G.E. ; Perley, A.P.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.37-42,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
98.

Conference Proceedings
Conference Proceedings
98. DAMAGE REMOVAL PROCESSES IN ION IMPLANTED, RAPIDLY ANNEALED GaAs
Jacobson, D.C. ; Pearton, S.J. ; Hull, R. ; Poate, J.M. ; Williams, J.S.
Pub. info.: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.361-368,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 52
99.

Conference Proceedings
Conference Proceedings
99. *TRANSIENT THERMAL PROCESSING OF GaAs
Pearton, S.J. ; Gibson, J.M. ; Jacobson, D.C. ; Poate, J.M. ; Williams, J.S. ; Boerma, D.O.
Pub. info.: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.351-360,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 52
100.

Conference Proceedings
Conference Proceedings
100. RAPID ANNEALING OF GaAs: UNIFORMITY AND TEMPERATURE DEPENDENCE OF ACTIVATION
Cummings, K.D. ; Pearton, S.J. ; Vella-Coleiro, G.P.
Pub. info.: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.375-382,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 52