1.

Conference Proceedings
Conference Proceedings
1. PLASMA ETCHING OF InP AND RELATED MATERIALS IN ELECTRON CYCLOTRON RESONANCE CH4/H2/Ar DISCHARGES
Pearton, S. J. ; Chakrabarti, U. K. ; Kinsell, A. P. ; Emerson, A. B. ; Johnson., D. ; Constantine, C.
Pub. info.: Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A..  pp.297-302,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 190
2.

Conference Proceedings
Conference Proceedings
2. ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES
Pearton, S. J. ; Ren, F. ; Lothian, J. R. ; Fullowan, T. R. ; Kopf, R. F. ; Chakrabati, U. K. ; Hui, S. P. ; Emerson, A. B. ; Pei, S. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.293-300,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING
Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.417-424,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
4.

Conference Proceedings
Conference Proceedings
4. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.409-416,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
5.

Conference Proceedings
Conference Proceedings
5. COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs
Ren, F. ; Fullowan, T. R. ; Lochian, J. R. ; Wisk, P.W. ; Abernathy, C. R. ; Kopf, R.F ; Emerson, A. B. ; Downey, S. W. ; Pearton, S. J.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.797-802,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
6.

Conference Proceedings
Conference Proceedings
6. In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Ren, F. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Emerson, A. B. ; Yanof, A. W. ; Schleich, D. M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.481-486,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181