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13 results

Conference Proceedings

1. Comparison of implant isolation species for GaN field-effect transistor structure

Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.68.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

2. Processing and device performance of GaN power rectifiers

Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.67.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

3. *Properties and effects of hydrogen in GaN

Pearton, S. J. ; Cho, H. ; Ren, F. ; Chyi, J-I. ; Han, J. ; Wilson, R. G.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W10.6.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

4. Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy

MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Donovan, S. M. ; Hommerich, U. ; Thaik, M. ; Wu, X. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.123-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

5. Hydrogen Passivation of Er-Doped AlN

Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Hommerich, U. ; Zavada, J. M. ; Ren, F. ; Wilson, R. G. ; Schwartz, R. N.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.169-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

6. Etching and Hydrogen Incorporation in ScAlMgO4

Brandle, C. D. ; Ren, F. ; Wilson, R. G. ; Lee, J. W. ; Pearton, S. J. ; Zavada, J. M.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.163-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

7. Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures

Pearton, S. J. ; Bendi, S. ; Jones, K. S. ; Krishnamoorthy, V. ; Wilson, R. G. ; Ren, F. ; Karlicek, R. F., Jr. ; Stall, R. A.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.993-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

8. Properties of H, O and C in GaN

Pearton, S. J. ; Abernathy, C. R. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J. ; Zolper, J. C.

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.347-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

Conference Proceedings

9. Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching

Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; Wilson, R. G. ; Chai, B. L. ; Ren, F. ; Zavada, J. M.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.1041-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

10.

Conference Proceedings

10. Passivation of Carbon Doping in InGaAs During ECR-CVD of SiNx

Ren, F. ; Hamm, R. A. ; Wilson, R. G. ; Pearton, S. J. ; Lothian, J. R.

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.321-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

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