1.

Conference Proceedings
Conference Proceedings
1. Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition [5941-66]
Li, Y. J. ; Heo, Y. W. ; Erie, J. M. ; Kim, H. S. ; Ip, K. ; Pearton, S. J. ; Norton, D. P.
Pub. info.: Fifth international conference on solid state lighting : 1-4 August 2005, San Diego, California, USA.  pp.59411T-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5941
2.

Conference Proceedings
Conference Proceedings
2. ZINC DIFFUSION IN GaAs-A1GaAs HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURES
Hobson, W. S. ; Pearton, S. J. ; Jordan, A. S.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.321-326,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
3.

Conference Proceedings
Conference Proceedings
3. THE EFFECT OF Xe ION BEAM TREATMENT ON THE INTERACTION BETWEEN GOLD AND GaAs
Pearton, S. J. ; Pecz, B. ; Radnoczi, G. ; Jorvath, Zs. J. ; Barna, P. B. ; Jaroli, Erika ; Gyulai, J.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.293-298,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
4.

Conference Proceedings
Conference Proceedings
4. Growth of a-Plane ZnO Thin Films on r-Plane Sapphire by Plasma-Assisted MBE
Xie, J. Q. ; Dong, J. W. ; Osinsky, A. ; Chow, P. P. ; Heo, Y. W. ; Norton, D. P. ; Pearton, S. J. ; Dong, X. Y. ; Adelmann, C. ; Palstrom, C. J.
Pub. info.: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.407-412,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 891
5.

Conference Proceedings
Conference Proceedings
5. PLASMA ETCHING OF InP AND RELATED MATERIALS IN ELECTRON CYCLOTRON RESONANCE CH4/H2/Ar DISCHARGES
Pearton, S. J. ; Chakrabarti, U. K. ; Kinsell, A. P. ; Emerson, A. B. ; Johnson., D. ; Constantine, C.
Pub. info.: Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A..  pp.297-302,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 190
6.

Conference Proceedings
Conference Proceedings
6. DEGRADATION OF HYDROGEN-PASSIVATED p-TYPE LAYERS IN GaAs BY MINORITY CARRIER INJECTION AND REVERSE BIAS ANNEALING
Tavendale, A. J. ; Pearton, S. J. ; Williams, A. A. ; Alexiev, D.
Pub. info.: Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A..  pp.87-92,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 184
7.

Conference Proceedings
Conference Proceedings
7. ANISOTROPIC REACTIVE ION ETCHING OF SUBMICRON W FEATURES IN CF4 OR SF6 PLASMAS
Fullowan, T. R. ; Ren, F. ; Pearton, S. J. ; Mahoney, G. E. ; Kostelak, R. L.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.315-322,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
8.

Conference Proceedings
Conference Proceedings
8. BEHAVIOUR OF IMPLANTED HYDROGEN IN GALLIUM PHOSPHIDE SINGLE CRYSTALS
Zavada, J. M. ; Wilson, R,. G. ; Novak, S. W. ; Pearton, S. J. ; Neida, Von A. R.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.457-462,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
9.

Conference Proceedings
Conference Proceedings
9. DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Fullowan, T. R. ; Pearton, S. J. ; Kopf, R. F. ; Ren, F. ; Chen, Y. K. ; Smith, P. R. ; Chin, C. A. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.285-292,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
10.

Conference Proceedings
Conference Proceedings
10. ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES
Pearton, S. J. ; Ren, F. ; Lothian, J. R. ; Fullowan, T. R. ; Kopf, R. F. ; Chakrabati, U. K. ; Hui, S. P. ; Emerson, A. B. ; Pei, S. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.293-300,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
11.

Conference Proceedings
Conference Proceedings
11. RAPID GROWTH KINETICS, MECHANICAL PROPERTIES AND THERMAL STABILITY OF SiOδ THIN FILMS GROWN BY RAPID THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION
Feingold, A. ; Katz, A. ; Pearton, S. J. ; Chakrabati, U. K. ; Jones, K. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.425-430,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
12.

Conference Proceedings
Conference Proceedings
12. *FORMATION OF OHMIC CONTACTS TO InP BY MEANS OF RAPID THERMAL LOW PRESSURE (METALORGANIC) CHEMICAL VAPOR DEPOSITION (RT-LPMOCVD) TECHNIQUE
Katz, A. ; Feingold, A. ; Pearton, S. J. ; Nakahara, S. ; Lane, E. ; Geva, M.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.393-408,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
13.

Conference Proceedings
Conference Proceedings
13. WET AND DRY ETCHING OF InGaP
Lothian, J. R. ; Kuo, J. M. ; Pearton, S. J. ; Ren, F.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.307-314,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
14.

Conference Proceedings
Conference Proceedings
14. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING
Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.417-424,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
15.

Conference Proceedings
Conference Proceedings
15. IMPLANT ISOLATION MECHANISMS IN GaAs., A1GaAs, InP AND InGaAs
Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Neida, Von A. A.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.433-438,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
16.

Conference Proceedings
Conference Proceedings
16. DRY ETCH DAMAGE IN GaAs P-N JUNCTIONS
Pearton, S. J. ; Abernathy, C. R.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.301-306,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
17.

Conference Proceedings
Conference Proceedings
17. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.409-416,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
18.

Conference Proceedings
Conference Proceedings
18. ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl
Pearton, S. J. ; Kuo, J. M. ; Hobson, W. S. ; Hailemarian, E. ; Ren, F. ; Katz, A. ; Perley, A. P.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.797-804,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
19.

Conference Proceedings
Conference Proceedings
19. RADIATION TESTING OF AlInAs/InGaAs AND GaAs/AlGaAs HBTs
Witmer, S. B. ; Mittleman, S. ; Lehy, D. ; Ren, F. ; Fullowan, T. R. ; Kopf, R. F. ; Abernathy, C. R. ; Pearton, S. J. ; Humphrey, D. A. ; Monthgomery, R. K. ; Smith, P. R. ; Kreskovsky, J. P. ; Grubin, H. L.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.523-530,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
20.

Conference Proceedings
Conference Proceedings
20. *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES
Pearton, S. J. ; Katz, A. ; Feingold A ; Ren, F. ; Fullowan, T. R. ; Lothian, J. R ; Abernathy, C. R.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.19-30,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
21.

Conference Proceedings
Conference Proceedings
21. * ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters
Osinsky, A. V. ; Dong, JianWei ; Xie, J. Q. ; Hertog, B. ; Dabiran, A. M. ; Chow, P. P. ; Pearton, S. J. ; Norton, D. P. ; Look, D. C. ; Schoenfeld, W. ; Lopatiuk, O. ; Chernyak, L. ; Cheung, M. ; Cartwright ; Gerhold, M.
Pub. info.: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.371-380,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 891
22.

Conference Proceedings
Conference Proceedings
22. Growth of Scandium Magnesium Oxide on GaN
Onstine, A. H. ; Herrero, A. ; Gila, B. P. ; Kim, J. ; Mehandru, R. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.397-402,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
23.

Conference Proceedings
Conference Proceedings
23. The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation
Gila, B. P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J. R. ; Onstine, A. H. ; Lambers, E. ; Siebein, K. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.385-396,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
24.

Conference Proceedings
Conference Proceedings
24. High Resolution Dry Etching of III-V Semiconductor Materials using Magnetically Enhanced Discharges
Pearton, S. J.
Pub. info.: Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX).  pp.73-86,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-18
25.

Conference Proceedings
Conference Proceedings
25. Non-Alloyed Ohmic Contacts on n-Type InP with Nitridation of Patterned InP Surface
Ren, F. ; Pearton, S. J. ; Lothian, J.R. ; Chu, S.N.G. ; Chu, W.K. ; Wilson, R.G. ; Abernathy, C.R. ; Pei, S.
Pub. info.: Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX).  pp.304-310,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-18
26.

Conference Proceedings
Conference Proceedings
26. *THE GROWTH, CHARACTERIZATION AND ELETRONIC DEVICE APPLICATIONS OF GaAs/Si
Jordan, A. S. ; Pearton, S. J. ; Hobson, W. S.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.261-278,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
27.

Conference Proceedings
Conference Proceedings
27. ELECTRICAL AND OPTICAL PROPERTIES OF VANADIUM IN OMVPE-GROWN GaAs
Hobson, W. S. ; Pearton, S. J. ; Swaminathan, V. ; Jordan, A. S. ; Kao, Y. J. ; Haegel, M. ; Kanber, H.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.125-130,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
28.

Conference Proceedings
Conference Proceedings
28. COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE
Wisk, P. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Fullowan, T. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.63-68,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
29.

Conference Proceedings
Conference Proceedings
29. GROWTH OF GaAs AND AlGaAs BY MOMBE USING PHENYLARSINE
Abernathy, C. R. ; Wisk, P. ; Pearton, S. J. ; Ren, F. ; Bohling, D. A. ; Muhr, G. T.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.57-62,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
30.

Conference Proceedings
Conference Proceedings
30. FORMATION OF INSULATING LAYERS IN GaAs-A1GaAs HETEROSTRUCTURES
Hobson, W. S. ; Pearton, S. J. ; Abernathy, C. R. ; von Neida, A. E.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.397-402,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
31.

Conference Proceedings
Conference Proceedings
31. RAPID ANNEALING OF RIE-INDUCED DDMAGE IN GaAs AND A1FGaAs
Pearton, S. J. ; Hobson, W. S. ; Chakrabarti, U. K. ; Short, K. T. ; White, A. E. ; Jnes, K. S
Pub. info.: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.399-404,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 146
32.

Conference Proceedings
Conference Proceedings
32. *HYDROGEN IN SILICON
Corbett, J. W. ; Lindstorm, J. L. ; Pearton, S. J.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.229-240,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
33.

Conference Proceedings
Conference Proceedings
33. ACTIVATION CHARACTERISTICS OF IMPLANTED DOPANTS IN InAs, GaSb AND GaP AFTER RAPID THERMAL ANNEALING
Von Neida, A. R. ; Short, K. T. ; Brown, J. M. ; Pearton, S. J.
Pub. info.: Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.689-694,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 100
34.

Conference Proceedings
Conference Proceedings
34. * ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters
Osinsky, A. V. ; Dong, Jianwei W. ; Xie, J. Q. ; Hertog, B. ; Dabiran, A. M. ; Chow, P. P. ; Pearton, S. J. ; Norton, D. P. ; Look, D. C. ; Schoenfeld, W. ; Lopatiuk, O. ; Chernyak, L. ; Cheung, M. ; Cartwright ; Gerhold, M.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.429-438,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
35.

Conference Proceedings
Conference Proceedings
35. LATTICE-MATCHED GaAs/Ca0.45Sr0.55F2.Ge(100) HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY
Tu, C. W. ; Beggy, J. C. ; Baiocchi, F. A. ; Abys, S. M. ; Pearton, S. J. ; Hsieh, S. J. ; Kopf, R. F. ; Caruso, R. ; Jordan, A. S.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.359-364,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91
36.

Conference Proceedings
Conference Proceedings
36. *EXTENDED X-RAY ABSORPTION FINE STRUCTURE STUDIES OF IMPURITIES IN SEMICONDUCTORS
Sette, F. ; Pearton, S. J. ; Poate, J. M. ; Rowe, J. E.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.515-526,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
37.

Conference Proceedings
Conference Proceedings
37. USE OF SELECTIVE AREA DEFECT CREATION FOR ISOLATION OF III-V MULTILAYER STRUCTURES
Pearton, S. J. ; Ren, F. ; Fullowan, T. R, ; Katz, A. ; Hobson, W. S. ; Abernaty, C. R. ; Lothian, J., R. ; D'Asaro, L. A. ; Elliman, R. G. ; Ridgway, M. C. ; Jagadish, C. ; Williams,. J. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.763-768,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
38.

Conference Proceedings
Conference Proceedings
38. COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs
Ren, F. ; Fullowan, T. R. ; Lochian, J. R. ; Wisk, P.W. ; Abernathy, C. R. ; Kopf, R.F ; Emerson, A. B. ; Downey, S. W. ; Pearton, S. J.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.797-802,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
39.

Conference Proceedings
Conference Proceedings
39. MATERIAL AND DEVICE PROPERTIES ON 3" DIAMETER GaAs-ON-Si WITH BURIED P--TYPE LAYERS
Pearton, S. J. ; Lee, K. M. ; Haegel, N. M. ; Huang, c.-J. ; Nakahara, S. ; Ren. F. ; Scarpelli, V. ; Short, K. T. ; Vernon, S. M.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.317-322,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
40.

Conference Proceedings
Conference Proceedings
40. ION INPLANTATION DAMAGE AND ITS ANNEALING CHARACTERISTICS IN AN A1As/GaAs LAYER STRUCTURE
Cullis, A. C. ; Jacobson, D. C. ; Poate, J. M ; Chew, N. G. ; Whitehouse, C. R. ; Pearton, S. J.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.361-366,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
41.

Conference Proceedings
Conference Proceedings
41. REDISTRIBUTION OF IMPLANTED HYDROGEN IN p+ GaAs (Zn) AND n+ GaAs(Si) CRYSTALS
Zavada, J. M. ; Wilson, R. G. ; Novak, S. W. ; Von Neida, A. R. ; Pearton, S. J.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.331-336,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
42.

Conference Proceedings
Conference Proceedings
42. IMPLANTED DOPANT-DEFECT INTERACTIONS IN GaAs
Pearton, S. J. ; Williams, J. S. ; Short, K. T. ; Johnson, S. T. ; Gibson, J. M. ; Jacobson, D. C. ; Poate, J. M. ; Boerma, D. O.
Pub. info.: Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.59-66,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 93
43.

Conference Proceedings
Conference Proceedings
43. HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS
Pearton, S. J. ; Chakrabarti, U. K. ; Katz, A. ; Ren, F. ; Fullowan, T. R. ; Abernathy, C R. ; Hobson, W. S.
Pub. info.: Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A..  pp.17-22,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 268
44.

Conference Proceedings
Conference Proceedings
44. Charge and Spin-Based Electronics Using ZnO Thin Films
Norton, D.P. ; Heo, Y.W. ; Ivill, M. ; Li, Y. ; Kwon, Y.W. ; Erie, J. M. ; Jones, M. ; Holloway, P.H. ; Pearton, S. J. ; Ren, F. ; Park, Z. V. ; Li, S. ; Hebard, A. F. ; Kelly, J.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.276-286,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
45.

Conference Proceedings
Conference Proceedings
45. RAPID ANNEALING OF GaAs AND RELATED COMPOUNDS
Williams, J. S. ; Pearton, S. J.
Pub. info.: Energy beam-solid interactions and transient thermal processing/1984 : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A..  pp.427-438,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 35
46.

Conference Proceedings
Conference Proceedings
46. AlN-based Dilute Magnetic Semiconductors
Frazier, R. ; Thaler, G. ; Gila, J. ; Stapleton, J. ; Overberg, M. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.17-23,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
47.

Conference Proceedings
Conference Proceedings
47. Gaeless AlGaN/GaN HEMT Response to Block Co-Polymers
Kang, B. S. ; Louche, G. ; Duran, R S. ; Gnanou, Y. ; Pearton, S. J. ; Ren, F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.39-45,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
48.

Conference Proceedings
Conference Proceedings
48. In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Ren, F. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Emerson, A. B. ; Yanof, A. W. ; Schleich, D. M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.481-486,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
49.

Conference Proceedings
Conference Proceedings
49. ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs
Pearton, S. J. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Chu, S. N. G. ; Kovalchick, J.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.491-496,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
50.

Conference Proceedings
Conference Proceedings
50. SUSCEPTOR AND PROXIMITY RAPID THERMAL ANNEALING OF InP
Katz, A. ; Pearton, S. J. ; Geva, M.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.473-480,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
51.

Conference Proceedings
Conference Proceedings
51. Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films-grown pulsed laser deposition (Invited Paper) [6337-56]
Li, Y. ; Kim, H. -S. ; Erie, J. -M. ; Ren, F. ; Pearton, S. J. ; Norton, D. P.
Pub. info.: Sixth international conference on solid state lighting : 14-17 August 2006, San Diego, California, USA.  pp.633708-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6337
52.

Conference Proceedings
Conference Proceedings
52. W2B Based High Thermal Stability Ohmic Contacts to n-GaN
Khanna, Rohit ; Pearton, S. J. ; Kao, C. J. ; Kravchenko, I. ; Ren, F. ; Chi, G. C. ; Dabiran, A. ; Osinsky, A.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.341-350,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
53.

Conference Proceedings
Conference Proceedings
53. Behavior of W and WSix Contact Metallization on n- and P-Type GaN
Cao, X. A. ; Ren, F. ; Lothian, J. R. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Cole, M. W. ; Zeitouny, A. ; Eizenberg, M. ; Shul, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.39.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
54.

Conference Proceedings
Conference Proceedings
54. Hydrogen in GaN Experiments
Pearton, S. J. ; Lee, J. W. ; Wilson, R. G. ; Zavada, J. M. ; Weinstein, M. G. ; Song, C. Y. ; Stavola, M.
Pub. info.: Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.229-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 513
55.

Conference Proceedings
Conference Proceedings
55. HYDROGEN INJECTION INTO p-TYPE SILICON BY CHEMICAL ETCHING
Travendale, A. J. ; Williams, A. A. ; Pearton, S. J.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.285-290,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
56.

Conference Proceedings
Conference Proceedings
56. PASSIVATION OF n-TYPE SILICON BY HYDROGEN
Bergman, K. ; Stavola, M. ; Pearton, S. J. ; Lopata, J.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.281-284,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
57.

Conference Proceedings
Conference Proceedings
57. Photoluminescence enhancement and morphological properties of carbon co-doped GaN: Er
Overberg. M. E. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Zavada, J. M.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.62.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
58.

Conference Proceedings
Conference Proceedings
58. Comparison of implant isolation species for GaN field-effect transistor structure
Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.68.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
59.

Conference Proceedings
Conference Proceedings
59. Processing and device performance of GaN power rectifiers
Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.67.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
60.

Conference Proceedings
Conference Proceedings
60. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.66.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
61.

Conference Proceedings
Conference Proceedings
61. Activation characteristics of donor and acceptor implants in GaN
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Wilson, R. G. ; Sekhar, J. A. ; Zolper, J. C. ; Han, J. ; Rieger, D. J. ; Shul, R. J. ; Guo, H. J. ; Pennycook, S. J. ; Zavada, J. M.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.513-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
62.

Conference Proceedings
Conference Proceedings
62. Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Mileham, J. R. ; Shul, R. J. ; Kilcoyne, S. P. ; Hagerott-Crawford, M. ; Ren, F. ; Hobson, W. S. ; Zavada, J. M.
Pub. info.: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.115-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 405
63.

Conference Proceedings
Conference Proceedings
63. *Properties and effects of hydrogen in GaN
Pearton, S. J. ; Cho, H. ; Ren, F. ; Chyi, J-I. ; Han, J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.6.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
64.

Conference Proceedings
Conference Proceedings
64. SULFIDE PASSIVATED GaAs/AlGaAs MICRODISK LASERS
Hobson, W. S. ; Mohideen, U. ; Pearton, S. J. ; Slusher, R. E. ; Ren, F. ; Schnoes, M. Lamont
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.201-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
65.

Conference Proceedings
Conference Proceedings
65. GROWTH AND DOPING OF AlAs BY MOMBE
Abernathy, C. R. ; Pearton, S. J. ; Wisk, P. W. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.187-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
66.

Conference Proceedings
Conference Proceedings
66. ICP Etching of SiC
Wang, J. J. ; Lambers, E. S. ; Pearton, S. J. ; Ostling, M. ; Zetterling, C-M. ; Grow, J. M. ; Ren, F.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.177-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
67.

Conference Proceedings
Conference Proceedings
67. Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy
MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Donovan, S. M. ; Hommerich, U. ; Thaik, M. ; Wu, X. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.123-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
68.

Conference Proceedings
Conference Proceedings
68. Selective Etching of Wide-Bandgap Nitrides
Shul, R. J. ; Willison, C. G. ; Bridges, M. M. ; Han, J. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Donovan, S. M.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.155-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
69.

Conference Proceedings
Conference Proceedings
69. Substrate Effects on the Growth of InN
Donovan, S. M. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Holloway, P. H. ; Ren, F. ; Zavada, J. M. ; Chai, B.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.161-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
70.

Conference Proceedings
Conference Proceedings
70. Hydrogen Passivation of Er-Doped AlN
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Hommerich, U. ; Zavada, J. M. ; Ren, F. ; Wilson, R. G. ; Schwartz, R. N.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.169-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
71.

Conference Proceedings
Conference Proceedings
71. Etching and Hydrogen Incorporation in ScAlMgO4
Brandle, C. D. ; Ren, F. ; Wilson, R. G. ; Lee, J. W. ; Pearton, S. J. ; Zavada, J. M.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.163-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
72.

Conference Proceedings
Conference Proceedings
72. In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon
Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; Vawter, G. A. ; Shul, R. J. ; Bridges, M. M. ; Willison, C. G.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.191-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
73.

Conference Proceedings
Conference Proceedings
73. High-Temperature Photoluminescence and Photo-luminescence Excitation Spectroscopy of Er-Doped Gallium Nitride
Hommerich, U. ; Thaik, Myo ; Robinson-Brown, T. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Schwartz, R. N. ; Zavada, J. M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.685-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
74.

Conference Proceedings
Conference Proceedings
74. Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing
Maeda, T. ; Lee, J. W. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Constantine, C. ; Shul, R. J.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.209-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
75.

Conference Proceedings
Conference Proceedings
75. RELIABLE IMPURITY IDENTIFICATION IN InP
Schnes, M. L. ; Harris, T. D. ; Pearton, S. J. ; Giuseppe, M. A. Di ; Bhat, R. ; Cox, H. M.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.113-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
76.

Conference Proceedings
Conference Proceedings
76. High-Rate ECR Plasma Etching of Cu at Room Temperature in Cl2/Ar
Jung, K-B. ; Lee, J. W. ; Park, Y. D. ; Childress, J. R. ; Pearton, S. J. ; Ren, F.
Pub. info.: Structure and evolution of surfaces : symposium held December 2-5, 1996, Boston, Massachusette, U.S.A..  pp.449-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 440
77.

Conference Proceedings
Conference Proceedings
77. ECR Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2
Shul, R. J. ; Baca, A. G. ; Rieger, D. J. ; Hou, H. ; Pearton, S. J. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.245-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
78.

Conference Proceedings
Conference Proceedings
78. Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures
Pearton, S. J. ; Bendi, S. ; Jones, K. S. ; Krishnamoorthy, V. ; Wilson, R. G. ; Ren, F. ; Karlicek, R. F., Jr. ; Stall, R. A.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.993-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
79.

Conference Proceedings
Conference Proceedings
79. Dry Etching of InGaP and AlInP in CH4/H2/Ar
Lee, J. W. ; Pearton, S. J. ; Santana, C. J. ; Lambers, E. S. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.315-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
80.

Conference Proceedings
Conference Proceedings
80. Properties of H, O and C in GaN
Pearton, S. J. ; Abernathy, C. R. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.347-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
81.

Conference Proceedings
Conference Proceedings
81. Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching
Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; Wilson, R. G. ; Chai, B. L. ; Ren, F. ; Zavada, J. M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1041-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
82.

Conference Proceedings
Conference Proceedings
82. Comparison of ICI and Ibr for Dry Etching of III-Nitrides
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Pearton, S. J. ; Abernathy, C. R. ; Shul, R. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1023-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
83.

Conference Proceedings
Conference Proceedings
83. Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN
Pearton, S. J. ; Vartuli, C. B. ; Lee, J. W. ; Donovan, S. M. ; MacKenzie, J. D. ; Abernathy, C. R. ; Shul, R. J. ; McLane, G. F. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.309-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
84.

Conference Proceedings
Conference Proceedings
84. Chemical Etching of AlN and InAlN in KOH Solutions
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Shul, R. J. ; Ren, F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1017-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
85.

Conference Proceedings
Conference Proceedings
85. Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas
Lee, J. W. ; Pearton, S. J. ; Stradtmann, R. R. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.239-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
86.

Conference Proceedings
Conference Proceedings
86. Chlorine-Based Plasma Etching of GaN
Shul, R. J. ; Briggs, R. D. ; Pearton, S. J. ; Vartuli, C. B. ; Abernathy, C. R. ; Lee, J. W. ; Constantine, C. ; Barratt, C.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.969-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
87.

Conference Proceedings
Conference Proceedings
87. Passivation of Carbon Doping in InGaAs During ECR-CVD of SiNx
Ren, F. ; Hamm, R. A. ; Wilson, R. G. ; Pearton, S. J. ; Lothian, J. R.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.321-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
88.

Conference Proceedings
Conference Proceedings
88. Cl2-Based ECR Etching of InGaP, AlInP and AlGaP
Hong, J. ; Lee, J. W. ; Pearton, S. J. ; Santana, C. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.303-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
89.

Conference Proceedings
Conference Proceedings
89. Ion Implantation and Annealing Studies in III-V Nitrides
Zolper, J. C. ; Pearton, S. J. ; Williams, J. S. ; Tan, H. H. ; Karlicek, R. J., Jr. ; Stall, R. A.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.981-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
90.

Conference Proceedings
Conference Proceedings
90. InN-Based Ohmic Contacts to AlInN
Donovan, S. M. ; Ren, F. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Jones, K.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1067-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
91.

Conference Proceedings
Conference Proceedings
91. Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN
Cho, Hyun ; Maeda, T. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J. ; Han, J. ; Ren, F.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.501-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
92.

Conference Proceedings
Conference Proceedings
92. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
93.

Conference Proceedings
Conference Proceedings
93. GaN Etching in BCl3/Cl2 Plasmas
Shul, R. J. ; Ashby, C. I. H. ; Willison, C. G. ; Zhang, L. ; Han, J. ; Bridges, M. M. ; Pearton, S. J. ; Lee, J. W. ; Lester, L. F.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.487-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
94.

Conference Proceedings
Conference Proceedings
94. Reliability of implant-isolation regions in highly-doped GaAs-based structures
Ren, F. ; Pearton, S. J. ; Lothian, J. R. ; Fullowan, T. R. ; Abernathy, C. R. ; Chu, S. N. G.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.337-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
95.

Conference Proceedings
Conference Proceedings
95. Formation of long wavelength InP laser MESAS
Ren, F. ; Pearton, S. J. ; Tseng, B. ; Lothian, J. R. ; Constantine, C.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.169-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
96.

Conference Proceedings
Conference Proceedings
96. EFFECTS OF ION-IRRADIATION AND HYDROGENATION ON THE DOPING OF InGaAlN ALLOYS
Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.261-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
97.

Conference Proceedings
Conference Proceedings
97. Low temperature SiNx as a sacrificial layer in novel device fabrication
Lothian, J. R. ; Ren, F. ; Pearton, S. J. ; Abernathy, C. R. ; Tseng, B. ; Hobson, W. S.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.161-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
98.

Conference Proceedings
Conference Proceedings
98. Comparison of Dry-Etch Techniques for GaN, InN, and AlN
Shul, R. J. ; Vawter, G. A. ; Willison, C. G. ; Bridges, M. M. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.103-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
99.

Conference Proceedings
Conference Proceedings
99. Fully planar ion-implanted 0.98 ｦﾌm strained quantum well laser
Hobson, W. S. ; Pearton, S. J. ; Ren, F. ; Chu, S. N. G. ; Bylsma, R. ; Elliman, R. G.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.107-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
100.

Conference Proceedings
Conference Proceedings
100. ORIENTED CARBON PAIR DEFECTS STABILIZED BY HYDROGEN IN AS-GROWN GaAs EPITAXIAL LAYERS
Cheng, Y. M. ; Stavola, M. ; Abernathy, C. R. ; Pearton, S. J.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.273-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325