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11 results

Conference Proceedings

1. IMPLANT ISOLATION MECHANISMS IN GaAs., A1GaAs, InP AND InGaAs

Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Neida, Von A. A.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.433-438, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

2. FORMATION OF INSULATING LAYERS IN GaAs-A1GaAs HETEROSTRUCTURES

Hobson, W. S. ; Pearton, S. J. ; Abernathy, C. R. ; von Neida, A. E.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.397-402, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

3. ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs

Pearton, S. J. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Chu, S. N. G. ; Kovalchick, J.

Pub. info.:	Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.. pp.491-496, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	181

Conference Proceedings

4. Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching

Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Mileham, J. R. ; Shul, R. J. ; Kilcoyne, S. P. ; Hagerott-Crawford, M. ; Ren, F. ; Hobson, W. S. ; Zavada, J. M.

Pub. info.:	Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.115-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	405

Conference Proceedings

5. GROWTH AND DOPING OF AlAs BY MOMBE

Abernathy, C. R. ; Pearton, S. J. ; Wisk, P. W. ; Hobson, W. S. ; Ren, F.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.187-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

Conference Proceedings

6. Dry Etching of InGaP and AlInP in CH4/H2/Ar

Lee, J. W. ; Pearton, S. J. ; Santana, C. J. ; Lambers, E. S. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.315-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

Conference Proceedings

7. Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas

Lee, J. W. ; Pearton, S. J. ; Stradtmann, R. R. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.239-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

Conference Proceedings

8. Cl2-Based ECR Etching of InGaP, AlInP and AlGaP

Hong, J. ; Lee, J. W. ; Pearton, S. J. ; Santana, C. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.303-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

Conference Proceedings

9. EFFECTS OF ION-IRRADIATION AND HYDROGENATION ON THE DOPING OF InGaAlN ALLOYS

Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.261-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

10.

Conference Proceedings

10. Low temperature SiNx as a sacrificial layer in novel device fabrication

Lothian, J. R. ; Ren, F. ; Pearton, S. J. ; Abernathy, C. R. ; Tseng, B. ; Hobson, W. S.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.161-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

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