Temperature Dependence of the Electrical Transport of Carbon Doped GaN

Temperature Dependence of the Electrical Transport of Carbon Doped GaN

Author(s):

Publication title:

Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

421

Pub. Year:

1996

Page(from):

425

Pub. info.:

Pittsburgh, Penn: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993242 [155899324X]

Language:

English

Call no.:

M23500/421

Type:

Conference Proceedings

Details

TDL ID:	ZA00018908
Series ID:	PA00000011
Conf. info. (Name):	Symposium on compound semiconductor electronics and photonics
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.10

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