1.

Conference Proceedings
Conference Proceedings
1. Activation characteristics of donor and acceptor implants in GaN
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Wilson, R. G. ; Sekhar, J. A. ; Zolper, J. C. ; Han, J. ; Rieger, D. J. ; Shul, R. J. ; Guo, H. J. ; Pennycook, S. J. ; Zavada, J. M.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.513-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
2.

Conference Proceedings
Conference Proceedings
2. Properties of H, O and C in GaN
Pearton, S. J. ; Abernathy, C. R. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.347-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
3.

Conference Proceedings
Conference Proceedings
3. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
4.

Conference Proceedings
Conference Proceedings
4. Repid Thermal Processing of Implanted GaN Up to 1500°C
Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Abernathy, C. R. ; Han, J. ; Shul, R. J. ; Rieger, D. J. ; Zolper, J. C. ; Wilson, R. G. ; Fu, M. ; Sekhar, J. A. ; Guo, H. J. ; Pennycook, S. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.33.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. p- and n-Type Implantation Doping of GaN with Ca and O
Zolper, J. C. ; Wilson, R. G. ; Pearton, S. J. ; Stall, R. A.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.189-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
6.

Conference Proceedings
Conference Proceedings
6. Role of C. O and H in III-Nitrides
Abernathy, C. R. ; Pearton, S. J. ; Mackenzie, J. D. ; Lee, J. W. ; Vartuli, C. B. ; Wilson, R. G. ; Shul, R. J. ; Zolper, J. C. ; Zavada, J. M.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.685-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
7.

Conference Proceedings
Conference Proceedings
7. Ion Implantation Doping and High Temperature Annealing of GaN
Zolper, J. C. ; Crawford, M. Hagerott ; Howard, A. J. ; Pearton, S. J. ; Abernathy, C. R. ; Vartuli, C. B. ; Yuan, C. ; Stall, R. A. ; Ramer, J. ; Hersee, S. D. ; Wilson, R. G.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.801-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395