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12 results

Conference Proceedings

1. ANISOTROPIC REACTIVE ION ETCHING OF SUBMICRON W FEATURES IN CF4 OR SF6 PLASMAS

Fullowan, T. R. ; Ren, F. ; Pearton, S. J. ; Mahoney, G. E. ; Kostelak, R. L.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.315-322, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

2. DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

Fullowan, T. R. ; Pearton, S. J. ; Kopf, R. F. ; Ren, F. ; Chen, Y. K. ; Smith, P. R. ; Chin, C. A. ; Lothian, J.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.285-292, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES

Pearton, S. J. ; Ren, F. ; Lothian, J. R. ; Fullowan, T. R. ; Kopf, R. F. ; Chakrabati, U. K. ; Hui, S. P. ; Emerson, A. B. ; Pei, S. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.293-300, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

4. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING

Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.417-424, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

5. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs

Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.409-416, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

6. RADIATION TESTING OF AlInAs/InGaAs AND GaAs/AlGaAs HBTs

Witmer, S. B. ; Mittleman, S. ; Lehy, D. ; Ren, F. ; Fullowan, T. R. ; Kopf, R. F. ; Abernathy, C. R. ; Pearton, S. J. ; Humphrey, D. A. ; Monthgomery, R. K. ; Smith, P. R. ; Kreskovsky, J. P. ; Grubin, H. L.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.523-530, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

7. *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES

Pearton, S. J. ; Katz, A. ; Feingold A ; Ren, F. ; Fullowan, T. R. ; Lothian, J. R ; Abernathy, C. R.

Pub. info.:	Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.. pp.19-30, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	260

Conference Proceedings

8. COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs

Ren, F. ; Fullowan, T. R. ; Lochian, J. R. ; Wisk, P.W. ; Abernathy, C. R. ; Kopf, R.F ; Emerson, A. B. ; Downey, S. W. ; Pearton, S. J.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.797-802, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

9. HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS

Pearton, S. J. ; Chakrabarti, U. K. ; Katz, A. ; Ren, F. ; Fullowan, T. R. ; Abernathy, C R. ; Hobson, W. S.

Pub. info.:	Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.. pp.17-22, 1992. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	268

10.

Conference Proceedings

10. In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

Ren, F. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Emerson, A. B. ; Yanof, A. W. ; Schleich, D. M.

Pub. info.:	Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.. pp.481-486, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	181

11.

Conference Proceedings

11. Reliability of implant-isolation regions in highly-doped GaAs-based structures

Ren, F. ; Pearton, S. J. ; Lothian, J. R. ; Fullowan, T. R. ; Abernathy, C. R. ; Chu, S. N. G.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.337-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

12.

Conference Proceedings

12. Small diameter dry etched via holes in GaAs

Pearton, S. J. ; Ren, F. ; Katz, A. ; Tseng, B. ; Lothian, J. R. ; Fullowan, T. R.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.153-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

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