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Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics

Author(s):
  • Ryu, H.-Y. ( Samsung Advanced Institute of Technology (South Korea) )
  • Ha, K.-H. ( Samsung Advanced Institute of Technology (South Korea) )
  • Chae, J.-H. ( Samsung Advanced Institute of Technology (South Korea) )
  • Nam, O.-H. ( Samsung Advanced Institute of Technology (South Korea) )
  • Park, Y.-J. ( Samsung Advanced Institute of Technology (South Korea) )
Publication title:
Novel In-Plane Semiconductor Lasers IV
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5738
Pub. Year:
2005
Page(from):
238
Page(to):
244
Pages:
7
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819457127 [0819457124]
Language:
English
Call no.:
P63600/5738
Type:
Conference Proceedings

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