1.

Conference Proceedings
Conference Proceedings
1. High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes
Levinshtein, M.E. ; Ivanov, P.A. ; Boltovets, M.S. ; Krivutsa, V.A. ; Palmour, J.W. ; Das, M.K. ; Hull, B.A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1339-1342,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature
Richmond, J. ; Ryu, S.H. ; Krishnaswami, S. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1445-1448,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Ivanov, P.A. ; Levinshtein, M.E. ; Agarwal, A.K. ; Krishnaswami, S. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1441-1444,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Krishnaswami, S. ; Agarwal, A.K. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1437-1440,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs
Agarwal, A.K ; Husna, F. ; Haley, J. ; Bartlow, H. ; McCalpin, B. ; Krishnaswami, S. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1413-1416,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
Agarwal, A.K. ; Krishnaswami, S. ; Damsky, B. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1397-1400,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
Zhang, Q.C. ; Ryu, S.H. ; Jonas, C. ; Agarwal, A.K. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1405-1408,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
8.

Conference Proceedings
Conference Proceedings
8. Energy Efficiency: The Commercial Pull for SiC Devices
Palmour, J.W.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1129-1134,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
9.

Conference Proceedings
Conference Proceedings
9. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
10.

Conference Proceedings
Conference Proceedings
10. *EPITAXIAL THIN FILM GROWTH AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE ALPHA AND BETA SILICON CARBIDE
Davis, Robert F. ; Palmour, J.W. ; Edmond, J.A.
Pub. info.: Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.463-474,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 162
11.

Conference Proceedings
Conference Proceedings
11. A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
Krishnaswami, S. ; Ryu, S.H. ; Heath, B. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Lelis, A.J. ; Scozzie, C.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1313-1316,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
12.

Conference Proceedings
Conference Proceedings
12. Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
Ryu, S.H. ; Krishnaswami, S. ; Hull, B.A. ; Heath, B. ; Das, M.K. ; Richmond, J.T. ; Agarwal, A.K. ; Palmour, J.W. ; Scofield, J.D.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1261-1264,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
13.

Conference Proceedings
Conference Proceedings
13. N2O Processing Improves the 4H-SiC:SiO2 Interface
Lipkin, L.A. ; Das, M.K. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.985-988,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs
Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.981-984,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. N2O Processing Improves the 4H-SiC:SiO2 Interface
Lipkin, L.A. ; Das, M.K. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.985-988,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors
Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1349-1352,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
17.

Conference Proceedings
Conference Proceedings
17. Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
Tang, Y. ; Chow, T.P. ; Agarwal, A.K. ; Ryu, S.-H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1341-1344,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
18.

Conference Proceedings
Conference Proceedings
18. Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor
Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L. ; Ryu, S.H. ; Shur, M.S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.743-746,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
19.

Conference Proceedings
Conference Proceedings
19. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
Singh, R. ; Irvine, K.G. ; Richmond, J.T. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1265-1268,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs
Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.981-984,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors
Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1349-1352,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
Tang, Y. ; Chow, T.P. ; Agarwal, A.K. ; Ryu, S.-H. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1341-1344,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
23.

Conference Proceedings
Conference Proceedings
23. Power Amplification in UHF Band Using SiC RF Power BJTs
Agarwal, A. ; Capell, C. ; Phan, B. ; Milligan, J. ; Palmour, J.W. ; Stambaugh, J. ; Bartlow, H. ; Brewer, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.785-788,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
24.

Conference Proceedings
Conference Proceedings
24. Optical Switch-On of Silicon Carbide Thyristor
Levinshtein, M.E. ; Ivanov, P.A. ; Agarwal, A.K. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.851-854,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
25.

Conference Proceedings
Conference Proceedings
25. Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
Sumakeris, J.J. ; Das, M. ; Hobgood, H.McD. ; Mueller, S.G. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H., Jr.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1113-1116,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
26.

Conference Proceedings
Conference Proceedings
26. Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
Ivanov, P.A. ; Levinshtein, M.E. ; Agarwal, A.K. ; Palmour, J.W. ; Ryu, S.H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1145-1148,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
27.

Conference Proceedings
Conference Proceedings
27. Parameters of Electron-Hole Scattering in Silicon Carbide
Mnatsakanov, T.T. ; Levinshtein, M.E. ; Ivanov, P.A. ; Tandoev, A.G. ; Yurkov, S.N. ; Palmour, J.W. ; Singh, R.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.411-414,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
28.

Conference Proceedings
Conference Proceedings
28. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, Mrinal K. ; Lipkin, L.A. ; Palmour, J.W. ; Saks, N. ; Williams, J.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1195-1198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN Rectifiers
Singh, R. ; Irvine, K.G. ; Richmond, J.T. ; Palmour, J.W.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1265-1268,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. 5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2
Sugawara, Y. ; Asano, K. ; Takayama, D. ; Ryu, S. ; Singh, R. ; Palmour, J.W. ; Hayashi, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1199-1202,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
31.

Conference Proceedings
Conference Proceedings
31. Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
Muller, St.G. ; Brady, M.F. ; Brixius, W.H. ; Glass, R.C. ; Hobgood, H.M. ; Jenny, J.R. ; Leonard, R.T. ; Malta, D.P. ; Powell, A.R. ; Tsvetkov, V.F. ; Allen, S.T. ; Palmour, J.W. ; Carter, C.H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.39-44,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436