1.

Conference Proceedings
Conference Proceedings
1. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with 30Si Isotope: Electron Paramagnetic Resonance Study
I.V. Ilyin ; M.V. Muzafarova ; P.G. Baranov ; B.Y. Ber ; A.N. Ionov ; E.N. Mokhov ; P.A. Ivanov ; M.A. Kaliteevskii ; P.S. Kop'ev
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.599-602,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
P.A. Ivanov ; I.V. Grekhov ; A.S. Potapov ; N.D. Il'inskaya ; O.I. Kon'kov
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.877-880,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
P.A. Ivanov ; I.V. Grekhov
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.865-868,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
E.I. Shabunina ; M.E. Levinshtein ; N.M. Shmidt ; P.A. Ivanov ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.559-562,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes
P.A. Ivanov ; O. Kon'kov ; T. Samsonova ; A. Potapov ; I. Grekhov
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.761-764,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
M.E. Levinshtein ; P.A. Ivanov ; J. Palmour ; A. Agarwal ; M.K. Das
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.539-542,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
7.

Conference Proceedings
Conference Proceedings
7. Self-Heating of 4H-SiC PiN Diodes at High Current Densities
M.E. Levinshtein ; T.T. Mnatsakanov ; P.A. Ivanov ; J.W. Palmour ; M.K. Das
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1007-1010,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
8.

Conference Proceedings
Conference Proceedings
8. Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction
P.A. Ivanov ; I.V. Grekhov
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.955-958,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers
P.A. Ivanov ; A.S. Potapov ; T.P. Samsonova
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.431-434,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
10.

Conference Proceedings
Conference Proceedings
10. 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
S.L. Rumyantsev ; M.S. Shur ; M.E. Levinshtein ; P.A. Ivanov ; J.W. Palmour
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1105-1108,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
11.

Conference Proceedings
Conference Proceedings
11. DLTS Measurements on 4H-SiC JBS-Diodes with Boron Implanted Local P-N Junctions
P.A. Ivanov ; O. Korolkov ; T.P. Samsonova ; N. Sleptsuk ; A.S. Potapov
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.409-412,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
12.

Conference Proceedings
Conference Proceedings
12. Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
P.A. Ivanov ; M.E. Levinshtein ; M.S. Boltovets ; V.A. Krivutsa ; J. Palmour ; M. Das ; B.A. Hull
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.921-924,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
13.

Conference Proceedings
Conference Proceedings
13. Low Frequency Noise in 4H-SiC MOSFETs
S.L. Rumyantsev ; M.S. Shur ; M.E. Levinshtein ; P.A. Ivanov ; J.W. Palmour
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.817-820,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
14.

Conference Proceedings
Conference Proceedings
14. Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Modeling)
P.A. Ivanov ; V.S. Yuferev ; M.E. Levinshtein ; J.Q. Zhang ; J.W. Palmour
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.563-566,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
15.

Conference Proceedings
Conference Proceedings
15. Fast Switch-Off of High Voltage 4H-SiC npn BJTs from Deep Saturation Mode
P.A. Ivanov ; M.E. Levinshtein ; J.W. Palmour ; A.K. Agarwal ; Q.J. Zhang
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1049-1052,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648