1.

Conference Proceedings
Conference Proceedings
1. Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams
Ohshima, T. ; Satoh, T. ; Oikawa, M. ; Onoda, S. ; Hirao, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1347-1350,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4E-SiC
Umeda, T. ; Son, N.T. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.543-546,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
Son, N.T. ; Umeda, T. ; Isoya, J. ; Gali, A. ; Bockstedte, M. ; Magnusson, B. ; Ellison, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.527-530,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. FABRICATION OF CoSi2 GATE Si PERMEABLE BASE TRANSISTOR USING Si-MBE
Nakagawa, K. ; Ohshima, T. ; Nakamura, N. ; Miyao. M.
Pub. info.: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.497-506,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 220
5.

Conference Proceedings
Conference Proceedings
5. Shallow P Donors in 3C-, 4H- and 6H-SiC
Isoya, J. ; Katagiri, M. ; Umeda, T. ; Son, N.T. ; Henry, A. ; Gali, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.593-596,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. *POLYSILICON SUPER THIN FILM TRANSISTOR TECHNOLOGY
Noguchi, T. ; Hayashi, H. ; Ohshima, T.
Pub. info.: Polysilicon films and interfaces : symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A..  pp.293-304,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 106
7.

Conference Proceedings
Conference Proceedings
7. Scandium and Gallium Implantation Doping of Silicon Carbide
Henkel, T. ; Tanaka, Y. ; Kobayashi, N. ; Koutzarov, I. ; Okumura, H. ; Yoshida, S. ; Ohshima, T.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.163-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
8.

Conference Proceedings
Conference Proceedings
8. Energy-Back-Transfer Process in Rare-Earth Doped AlGaN
Wakahara, A. ; Fujiwara, T. ; Okada, H. ; Yoshida, A. ; Ohshima, T. ; Itho, H.
Pub. info.: Rare-earth doping for optoelectronic applications : symposium held March 29-31, 2005, San Francisco, California, U.S.A..  pp.91-96,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 866
9.

Conference Proceedings
Conference Proceedings
9. Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
Ohi, A. ; Ohshima, T. ; Yoshikawa, M. ; Lee, K. K. ; Iwami, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.831-834,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, T. ; Lee, K.K. ; Ohi, A. ; Yoshikawa, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1093-1096,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
Lee, K.K. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1097-1100,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Satoh, M. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1009-1012,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC
Yoshikawa, M. ; Ohshima, T. ; Itoh, H. ; Takahashi, K. ; Kitabatake, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.635-638,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
14.

Conference Proceedings
Conference Proceedings
14. Preparation of Carbon Nano-Materials Using Arc Discharge in Liquid
Suda, Y. ; Kawasaki, H. ; Ohshima, T. ; Nakashima, S. ; Kawazoe, S. ; Toma, T.
Pub. info.: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.417-422,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 829
15.

Conference Proceedings
Conference Proceedings
15. ULTRA-HIGH-SENSITIVE IMAGE PICKUP TUBES USING AVALANCHE MULTIPLICATION IN a-Se
Tsuji, K. ; Ohshima, T. ; Hirai, T. ; Gotoh, N. ; Taniaoka, K.
Pub. info.: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.507-518,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 219
16.

Conference Proceedings
Conference Proceedings
16. Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
Ohshima, T. ; Yoshikawa, M. ; Itoh, H. ; Kojima, K. ; Okada, S. ; Nashiyama, I.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1299-1302,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
17.

Conference Proceedings
Conference Proceedings
17. Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, T. ; Uedono, A. ; Itoh, H. ; Yoshikawa, M. ; Kojima, K. ; Okada, S. ; Nashiyama, I. ; Abe, K. ; Tanigawa, S. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.857-860,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
18.

Conference Proceedings
Conference Proceedings
18. Characterization of Au Schottky Contacts on p-Type 3C-SiC Grown by Low Pressure Chemical Vapor Deposition
Kojima, K. ; Yoshikawa, M. ; Ohshima, T. ; Itoh, H. ; Okada, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1239-1242,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
19.

Conference Proceedings
Conference Proceedings
19. Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method
Kawasaki, H. ; Suda, Y. ; Ohshima, T. ; Ueda, T. ; Nakashima, S.
Pub. info.: Nanoparticles and nanowire buildings blocks--synthesis, processing, characterization and theory : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.241-246,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 818
20.

Conference Proceedings
Conference Proceedings
20. Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions
Ohshima, T. ; Itoh, H. ; Yoshikawa, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.575-578,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
21.

Conference Proceedings
Conference Proceedings
21. Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum
Ohi, A. ; Ohshima, T. ; Yoshikawa, M. ; Lee, K.K. ; Iwami, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.831-834,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC
Mizuochi, N. ; Isoya, J. ; Yamasaki, S. ; Takizawa, H. ; Morishita, N. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.497-500,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
23.

Conference Proceedings
Conference Proceedings
23. Modelling of Radiation Response of p-Channel SiC MOSFETs
Lee, K.K. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.761-764,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
24.

Conference Proceedings
Conference Proceedings
24. EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC
Umeda, T. ; Ishitsuka, Y. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Kamiya, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.465-468,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
25.

Conference Proceedings
Conference Proceedings
25. Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation
Weidner, M. ; Pensl, G. ; Nagasawa, H. ; Schoner, A. ; Ohshima, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.485-488,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
26.

Conference Proceedings
Conference Proceedings
26. Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Kojima, K. ; Ohshima, T. ; Itoh, H. ; Okada, S. ; Ishida, Y.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1129-1132,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
27.

Conference Proceedings
Conference Proceedings
27. Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC
Ohshima, T. ; Lee, K.K. ; Ishida, Y. ; Kojima, K. ; Tanaka, Y. ; Takahashi, T. ; Yoshikawa, M. ; Okumura, H. ; Arai, K. ; Kamiya, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1405-1408,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
28.

Conference Proceedings
Conference Proceedings
28. Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
Laube, M. ; Pensl, G. ; Lee, K.K. ; Ohshima, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1381-1384,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
29.

Conference Proceedings
Conference Proceedings
29. Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
Yoshikawa, M. ; Satoh, M. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1009-1012,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
30.

Conference Proceedings
Conference Proceedings
30. EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC
Mizuochi, N. ; Isoya, J. ; Yamasaki, S. ; Takizawa, H. ; Morishita, N. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.497-500,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
31.

Conference Proceedings
Conference Proceedings
31. Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, T. ; Lee, K. K. ; Ohi, A. ; Yoshikawa, M. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1093-1096,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
32.

Conference Proceedings
Conference Proceedings
32. Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
Lee, K. K. ; Ohshima, T. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1097-1100,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
33.

Conference Proceedings
Conference Proceedings
33. Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
Ohshima, T. ; Uedono, A. ; Eryu, O. ; Lee, K.K. ; Abe, K. ; Itoh, H. ; Nakashima, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.633-636,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
34.

Technical Paper
Technical Paper
34. Experimental approach to the HYPR Mch 5 ramjet propulsion system
Ohshima, T. ; Enomoto, Y. ; Nakanishi, H. ; Futamura, H. ; Yanagi, R. ; Mitani, T.
Pub. info.: AIAA paper.  pp.1-9,  1998.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit
Ser. no.: 1998
35.

Technical Paper
Technical Paper
35. Control of the intake shock-position in the test rig for ramjet engine
Ohshima, T. ; Kanbe, K. ; Kimura, H. ; Fujiwara, K. ; Suzuki, K. ; Yanagi, R.
Pub. info.: AIAA paper.  pp.1-9,  1997.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit
Ser. no.: 1997
36.

Technical Paper
Technical Paper
36. On Simplified Mechanical Models for Rocket-Body Divergence and Flutter
Ohshima, T. ; Sugiyama, Y.
Pub. info.: A collection of technical papers : 44th AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics, and Materials Conference : 11th AIAA/ASME/AHS Adaptive Structures Forum : 4th AIAA Gossamer Spacecraft Forum : AIAA Dynamics Specialists Conference, Norfolk, Virginia, 7-10 April 2003.  v. 7  pp.4964-4971,  2003.  Reston, Va.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics, and Materials Conference
Ser. no.: 2003
37.

Conference Proceedings
Conference Proceedings
37. Study of alternating phase shift mask structures for ArF lithography
Kojima, Y. ; Konishi, T. ; Sasaki, J. ; Tanaka, K. ; Komizo, T. ; Morita, M. ; Shirasaki, M. ; Ohshima, T. ; Takahashi, H. ; Chiba, K. ; Otaki, M. ; Okuda, Y.
Pub. info.: Photomask and Next-Generation Lithography Mask Technology XI.  pp.570-577,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5446
38.

Conference Proceedings
Conference Proceedings
38. Performance study of chromeless phase lithography mask for the 65nm node and beyond [6154-81]
Kojima, Y. ; Ohshima, T. ; Chiba, K. ; Konishi, T.
Pub. info.: Optical Microlithography XIX.  pp.615428-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6154
39.

Conference Proceedings
Conference Proceedings
39. Desktop autostereoscopic display using LCD, mirrors, and lenses
Kaneko, H. ; Ohshima, T. ; Ebina, O.
Pub. info.: Stereoscopic Displays and Virtual Reality Systems X.  pp.109-117,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5006
40.

Conference Proceedings
Conference Proceedings
40. Study of alternating phase-shift mask structure for 65-nm node devices
Konishi, T. ; Komizo, T. ; Takahashi, H. ; Morita, M. ; Ohshima, T. ; Chiba, K. ; Kojima, Y. ; Sasaki, J. ; Tanaka, K. ; Otaki, M. ; Okuda, Y.
Pub. info.: 23rd Annual BACUS Symposium on Photomask Technology.  pp.880-888,  2003.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5256
41.

Conference Proceedings
Conference Proceedings
41. Evaluation of quartz dry etching profile for the PSM lithography performance [5853-109]
Komizo, T. ; Nemoto, S. ; Kojima, Y. ; Ohshima, T. ; Yoshii, T. ; Konishi, T. ; Chiba, K. ; Kikuchi, Y. ; Otaki, M. ; Okuda, Y.
Pub. info.: Photomask and Next-Generation Lithography Mask Technology XII.  pp.223-233,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5853