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38 results

Conference Proceedings

1. Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams

Ohshima, T. ; Satoh, T. ; Oikawa, M. ; Onoda, S. ; Hirao, T. ; Itoh, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1347-1350, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4E-SiC

Umeda, T. ; Son, N.T. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.543-546, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC

Son, N.T. ; Umeda, T. ; Isoya, J. ; Gali, A. ; Bockstedte, M. ; Magnusson, B. ; Ellison, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.527-530, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. FABRICATION OF CoSi2 GATE Si PERMEABLE BASE TRANSISTOR USING Si-MBE

Nakagawa, K. ; Ohshima, T. ; Nakamura, N. ; Miyao. M.

Pub. info.:	Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.. pp.497-506, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	220

Conference Proceedings

5. Shallow P Donors in 3C-, 4H- and 6H-SiC

Isoya, J. ; Katagiri, M. ; Umeda, T. ; Son, N.T. ; Henry, A. ; Gali, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.593-596, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. *POLYSILICON SUPER THIN FILM TRANSISTOR TECHNOLOGY

Noguchi, T. ; Hayashi, H. ; Ohshima, T.

Pub. info.:	Polysilicon films and interfaces : symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A.. pp.293-304, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	106

Conference Proceedings

7. Scandium and Gallium Implantation Doping of Silicon Carbide

Henkel, T. ; Tanaka, Y. ; Kobayashi, N. ; Koutzarov, I. ; Okumura, H. ; Yoshida, S. ; Ohshima, T.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.163-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

8. Energy-Back-Transfer Process in Rare-Earth Doped AlGaN

Wakahara, A. ; Fujiwara, T. ; Okada, H. ; Yoshida, A. ; Ohshima, T. ; Itho, H.

Pub. info.:	Rare-earth doping for optoelectronic applications : symposium held March 29-31, 2005, San Francisco, California, U.S.A.. pp.91-96, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	866

Conference Proceedings

9. Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum

Ohi, A. ; Ohshima, T. ; Yoshikawa, M. ; Lee, K. K. ; Iwami, M. ; Itoh, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.831-834, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

Ohshima, T. ; Lee, K.K. ; Ohi, A. ; Yoshikawa, M. ; Itoh, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1093-1096, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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