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Conference Proceedings
Conference Proceedings
1. ROOM TEMPERATURE PHOTORESIST REMOVAL PROCESS BY USING KF/H2O2/H2O
Omae, S. ; Jizaimaru, T. ; Ojima, S. ; Ohmi, T.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.488-495,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
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Conference Proceedings
Conference Proceedings
2. The Removal Efficiency of Copper Impurity on Various Silicon Surfaces
Sekine, K. ; Choi, G.-M. ; Morita, H. ; Ohmi, T.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.211-220,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
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Conference Proceedings
Conference Proceedings
3. The Dependence of Cu Removal Efficiency on the Initial Cu Concentration of Si Surface
Kim, J.-S. ; Morita, H. ; Joo, J.-D. ; Ohmi, T.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.199-210,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
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Conference Proceedings
Conference Proceedings
4. High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals
Ohmi, T. ; Sugawa, S. ; Hirayama, M.
Pub. info.: Silicon Nitride and Silicon Dioxide Thin Insulating Films : proceedings of the sixth International Symposium.  pp.241-252,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-7
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Conference Proceedings
Conference Proceedings
5. PASSIVATION OF Cu PARTICLES ON Si SUBSTRATE BY FOM(HF+O3- UPW) SOLUTION
Morita, H. ; Joo, J.-D. ; Messoussi, R. ; Kawada, K. ; Kim, J.-S. ; Ohmi, T.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.143-150,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
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Conference Proceedings
Conference Proceedings
6. THE EFFECT OF SURFACE DAMAGE DUE TO Si INPLANTATION ON ADSORPTION AND DESORPTION OF Cu ON Si SURFACE -
Kim, J.-S. ; Morita, H. ; Joo, J.-D. ; Ohmi, T.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.151-158,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
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Conference Proceedings
Conference Proceedings
7. PARTICLE AND METALLIC IMPURITIES REMOVAL BY USING NEW SPIN CLEANER BASED ON UCT CLEANING CONCEPT
Kwada, K. ; Nakamori, M. ; Morita, H. ; Okano, S. ; Nitta, T. ; Ohmi, T.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.528-535,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
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Conference Proceedings
Conference Proceedings
8. Studies of Moisture Adsorption on Various Kinds of Solid Surfaces Using Anhydrous Hydrogen Fluoride
Izumi, H. ; Nakagawa, Y. ; Miyoshi, S. ; Ohmi, T.
Pub. info.: Proceedings of the Seventh International Symposium on Oxide Films on Metals and Alloys.  pp.246-255,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-25
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Conference Proceedings
Conference Proceedings
9. Redidual End-of-Range Damage Reduction in Low-Temperature-Annealed Ion-Implanted Junctions by Using Low-Doped Silicon Substrate
Tamai, Y. ; Oka, M.M. ; Nakada, A. ; Shibata, T. ; Ohmi, T.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.643-654,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
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Conference Proceedings
Conference Proceedings
10. Improvement of Gate Oxide Integrity by Preparing Atomic Order Flattened Si (100) Surface
Nakamura, O. ; Ohkawa, T. ; Ohmi, T.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.101-112,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2
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Conference Proceedings
Conference Proceedings
11. Low-Temperature Formation of Gate-Grade Silicon Oxide Films Using High-Density Krypton Plasma
Saito, Y. ; Sekine, K. ; Hirayama, M. ; Ohmi, T.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.113-124,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2
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Conference Proceedings
Conference Proceedings
12. IN SiTU CHAMBER CLEANING USING HALOGENATED-GAS PLASMAS EVALUATED BY EXTRACTED-PLASMA- PARAMETER ANALYSIS
Ino, K. ; Natori, I. ; Ichikawa, A. ; Ohmi, T.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.339-346,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
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Conference Proceedings
Conference Proceedings
13. Highly Reliable Thin SiO2 Film formation Technology
Ohmi, T. ; Okada, Y. ; Yabune, T. ; Ohmi, K.
Pub. info.: Proceedings of the Symposium on Reliability of Metals in Electronics.  pp.44-53,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-3
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Conference Proceedings
Conference Proceedings
14. THE CONTROL OF ETCHING RATE FOR VARIOUS SiO2 FILMS
Kezuka, T. ; Itano, M. ; Ohmi, T.
Pub. info.: Cleaning technology in semiconductor device manufacturing : proceedings of the sixth international symposium.  pp.244-251,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-36
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Conference Proceedings
Conference Proceedings
15. IN-SITU CHAMBER CLEANING: OPTIMIZING CLEANING GAS AND CHAMBER MATERIALS
Vrtis, R.N. ; Natori, I. ; Ichikawa, A. ; Ino, K. ; Ohmi, T.
Pub. info.: Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing III.  pp.418-428,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-9
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Conference Proceedings
Conference Proceedings
16. DETERMINATION OF THE H-PASSIVATION BUILD-UP TIME IN DHF-TREATMEN
Meuris, M. ; Izumi, H. ; Kubo, K. ; Ojima, S. ; Ohmi, T. ; Heyns, M.M.
Pub. info.: Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.444-448,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-20
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Conference Proceedings
Conference Proceedings
17. BEHAVIOR OF ULTRA FINE METALLIC PARTICLES (-10 inm) ON SILICON WAFER SURFACE
Morinaga, H. ; Futatsuki, T. ; Ohmi, T. ; Fuchita, E. ; Oda, M. ; Hayashi, C.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.458-465,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
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Conference Proceedings
Conference Proceedings
18. COMPARISON OF CLEANING EFFICIENCIES OF NOBEL METALS ON Si SURFACES BETWEEN O3-UPW AND SPM
Joo, J.-D. ; Kim, J.-S. ; Morita, H. ; Ohmi, T.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.280-288,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
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Conference Proceedings
Conference Proceedings
19. Low Temperature Thin Oxide Film Formation by Microwave Excitation High Density Plasma Direct Oxidation
Kaihara, R. ; Hirayama, M. ; Ohmi, T.
Pub. info.: Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes.  pp.223-230,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-30
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Conference Proceedings
Conference Proceedings
20. Revolution of Silicon Substrate Surface Cleaning
Ohmi, T.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.197-198,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
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Conference Proceedings
Conference Proceedings
21. Micro-Arc Nitriding of Titanium Surface
Matsuura, K. ; Arita, H. ; Ohmi, T. ; Kudoh, M. ; Miyamoto, Y.
Pub. info.: Functionally graded materials VIII : proceedings of the 8th International Symposium on Multifunctional and Functionally Graded Materials (FGM2004) : held in Leuven, Belgium, 11-14 July 2004.  pp.225-228,  2005.  Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 492-493
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Conference Proceedings
Conference Proceedings
22. Low-Temperature Formation of SiO2 and High Dielectrics Constant Material for ULSI in the 21st Century
Ohmi, T. ; Sekine, K. ; Kaihara, R. ; Saito, Y. ; Shirai, Y. ; Hirayama, M.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.3-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
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Conference Proceedings
Conference Proceedings
23. Influence of Si Substrate Crystallinity of Device Performance
Iwamoto, T. ; Takano, J. ; Makihara, K. ; Ohmi, T.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.193-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
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Conference Proceedings
Conference Proceedings
24. CHEMICAL OXIDE PASSIVATION FOR VERY THIN OXIDE FORMATION
Takano, J. ; Makihara, K. ; Ohmi, T.
Pub. info.: Surface chemical cleaning and passivation for semiconductor processing.  pp.381-,  1993.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 315
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Conference Proceedings
Conference Proceedings
25. Megasonic Irradiation-Induced Chemical Reaction in the Solution for Silicon Wafer Cleaning
Ohmi, T. ; Toda, M. ; Katoh, M. ; Kawada, K. ; Morita, H.
Pub. info.: Science and technology of semiconductor surface preparation : symposium held April 1-3, 1997, San Francisco, California, U.S.A..  pp.3-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 477
26.

Conference Proceedings
Conference Proceedings
26. Solar Wind Imaging Facility (SWIFT) for space weather research
Kojima, M. ; Tokumaru, M. ; Fujiki, K. ; Ishida, Y. ; Ohmi, T. ; Hayashi, K. ; Yamashita, M.
Pub. info.: Innovative telescopes and instrumentation for solar astrophysics : 24-28 August 2002, Waikoloa, Hawaii, USA.  pp.121-128,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4853
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Conference Proceedings
Conference Proceedings
27. Suppression of Surface Micro-Roughness on Si(110)
Nii, K. ; Akahori, H. ; Yamamoto, M. ; Teramoto, A. ; Ohmi, T.
Pub. info.: Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium.  pp.392-403,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-04
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Conference Proceedings
Conference Proceedings
28. INFLUENCE OF MOLECULAR WEIGHT OF ORGANIC CONTAMINANTS UPON ADSORPTION BEHAVIORS ONTO SILICON SURFACES
Nagase, M. ; Kitano, M. ; Wakayama, Y. ; Shirai, Y. ; Ohmi, T.
Pub. info.: Cleaning technology semiconductor device manufacturing : proceedings of the seventh international symposium.  pp.47-53,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-26
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Conference Proceedings
Conference Proceedings
29. Ultra-Low Temperature Growth of High-Integrity Gate Oxide Films by Low-Energy Ion-Assisted Oxidation
Kawai, Y. ; Konishi, N. ; Watanabe, J. ; Ohmi, T.
Pub. info.: Proceedings of the tenth symposium on plasma processing.  pp.568-579,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-20
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Conference Proceedings
Conference Proceedings
30. EFFECT OF pH VALUES IN OZONIZED ULTRAPURE WATER ON CLEANING EFFICIENCY
Yokoi, I. ; Choi, G.-M. ; Ohmi, T.
Pub. info.: Cleaning technology semiconductor device manufacturing : proceedings of the seventh international symposium.  pp.69-76,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-26
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Conference Proceedings
Conference Proceedings
31. Comparison of Polysilicon Etching between Pure and Nitrogen Added Chlorine ECR Plasmas
Matsuura, T. ; Murota, J. ; Ono, S. ; Ohmi, T.
Pub. info.: Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control.  pp.141-148,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-21
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Conference Proceedings
Conference Proceedings
32. Eliminating Metal-Sputter Contamination in Ion Implanter for Low Reverse-Bias Current. 450C-Annealed Junctions
Tomita, K. ; Migita, T. ; Shimonishi, S. ; Shibata, T. ; Ohmi, T. ; Nitta, T.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.286-297,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
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Conference Proceedings
Conference Proceedings
33. New Measurement Method of Adsorbed Moisture Concentration on Solid Surface
Nakagawa, Y. ; Aomi, H. ; Takano, J. ; Ohmi, T.
Pub. info.: Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing II.  pp.97-108,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-3
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Conference Proceedings
Conference Proceedings
34. DIFFERENT ADSORPTION BEHVIORS OF PLATINUM GROUP METALS ONSILICON SURFACES
Yokoi, I. ; Kitami, K. ; Choi, G.-M. ; Ohmi, T.
Pub. info.: Cleaning technology semiconductor device manufacturing : proceedings of the seventh international symposium.  pp.102-109,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-26
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Conference Proceedings
Conference Proceedings
35. Analysis of Negative Pressure in Solidifying Al-Si Alloy with Effect of Fluid Flow and Solid Deformation
Ohsasa, K. ; Ohmi, T.
Pub. info.: PRICM 5 : the Fifth Pacific Rim International Conference on Advanced Materials and Processing, November 2-5, 2004, Beijing, China.  pp.2691-2694,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 475-479(4)
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Conference Proceedings
Conference Proceedings
36. CONTAMINATION REMOVAL BY WAFER SPIN CLEANING PROCESS WITH ADVANCED CHEMICAL DISTRIBUTION SYSTEM
Yonekawa, N. ; Yasui, S. ; Kunimoto, F. ; Ohmi, T. ; Kern, F.W.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.94-101,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
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Conference Proceedings
Conference Proceedings
37. ULTRA THIN OXIDE FORMATION USING CHEMICAL OXIDE PASSIVATION
Nakamura, K. ; Futatsuki, T. ; Makihara, K. ; Ohmi, T.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.70-77,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
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Conference Proceedings
Conference Proceedings
38. THE EFFECT OF H2 ANNEALING ON THE Si SURFACE AND ITS USE IN THE STUDY OF ROUGHENING DURING WET CHEMICAL CLEANING
Verhaverbeke, S. ; Futatsuki, T. ; Messoussi, R. ; Ohmi, T.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.1170-1181,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
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Conference Proceedings
Conference Proceedings
39. ADVANCED WET CHEMICAL CLEANING FOR FUTURE ULSI FABRICATION
Ohmi, T.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.3-14,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
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Conference Proceedings
Conference Proceedings
40. Al2O3 Passivation Film on Austenitic Stainless Steel Free from Plasma Damage
Kitano, M. ; Nagase, M. ; Shirai, Y. ; Ohmi, T.
Pub. info.: Corrosion and corrosion protection : proceedings of the international symposium.  pp.115-121,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-22
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Conference Proceedings
Conference Proceedings
41. Study on Cu Cleaning Efficacy Depending on Initial Contamination Method
Kim, J. S. ; Morita, H. ; Joo, J. D. ; Ohmi, T.
Pub. info.: Science and technology of semiconductor surface preparation : symposium held April 1-3, 1997, San Francisco, California, U.S.A..  pp.259-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 477
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Conference Proceedings
Conference Proceedings
42. STUDY ON MEGASONIC IN ADVANCED WET CLEANING PROCESS
Kubo, K. ; Ojima, S. ; Toda, M. ; Ohmi, T.
Pub. info.: Proceedings of the Fourth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.107-114,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-20
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Conference Proceedings
Conference Proceedings
43. Model of coating and drying process for flat polymer film fabrication
Kagami, H. ; Miyagawa, R. ; Kawata, A. ; Nakashima, D ; Kobayashi, S. ; Kitano, T. ; Takeshita, K. ; Kubota, H. ; Ohmi, T.
Pub. info.: Photomask and Next-Generation Lithography Mask Technology IX.  pp.252-259,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4754