1.

Conference Proceedings
Conference Proceedings
1. THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION IN MOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS
George, T. ; Weber, E. R. ; Nozaki, S. ; Wu, A. T. ; Umeno, M.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.207-212,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
2.

Conference Proceedings
Conference Proceedings
2. HEAVILY CARBON DOPED P-TYPE GaAs/InGaAs STRAINED-LAYER SUPERLATTICES GROWN BY MOMBE
Qi, Ming ; Luo, Jinsheng ; Shirakashi, J. ; Tokumitsu, E. ; Nozaki, S. ; Konagai, M. ; Takahashi, K.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.167-172,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
3.

Conference Proceedings
Conference Proceedings
3. Porous Alloyed W/Si Contacts for Light Emitting Devices
Ichinohe, T. ; Masaki, S. ; Nozaki, S. ; Morisaki, H.
Pub. info.: Proceedings of the International Symposium on Pits and Pores--Formation, Properties, and Significance for Advanced Luminescent Materials.  pp.517-523,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-7
4.

Conference Proceedings
Conference Proceedings
4. Self-Limited Stripe Width in the Selective Metalorganic Chemical Vapor Deposition Growth in GaAs
Yamaguchi, K. ; Nozaki, S.
Pub. info.: Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors.  pp.253-261,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-2
5.

Conference Proceedings
Conference Proceedings
5. Electronic Structure of the Valence Band of Tetragonal Germanium Nanostructures Deposited by the Cluster-Beam Evaporation Technique
Sato, S. ; Nozaki, S. ; Morisaki, H.
Pub. info.: Proceedings of the Fourth International Symposium on Quantum Confinement : nanoscale materials, devices, and systems.  pp.177-184,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-11
6.

Conference Proceedings
Conference Proceedings
6. High efficiency electroluminescence from anodically oxidized porous silicon
Show, Y. ; Nozaki, S. ; Morisaki, H. ; Iwase, M. ; Izumi, T.
Pub. info.: Advanced luminescent materials and quantum confinement : proceedings of the international symposium.  pp.3-9,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-22
7.

Conference Proceedings
Conference Proceedings
7. Improvement of Red Light Emission in H2 Treated Silicon Nanocrystal
Sato, K. ; Sugigama, Y. ; Izumi, T. ; Iwase, M. ; Show, Y. ; Nozaki, S. ; Morisaki, H.
Pub. info.: Advanced luminescent materials and quantum confinement : proceedings of the international symposium.  pp.240-245,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-22
8.

Conference Proceedings
Conference Proceedings
8. CORRELATIONS BETWEEN CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GaAs GROWN ON Si BY MOCVD
Egawa, T. ; Nozaki, S. ; Noto, N. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.273-278,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
9.

Conference Proceedings
Conference Proceedings
9. THE THERMAL STABILITY OF HEAVILY CARBON-DOPED GaAs GROWN BY METALORGANIC MOLECULAR BEAM EPITAXY
Sohn, Hyunchul ; Weber, E. R. ; Nozaki, S. ; Konagal, M. ; Takahashi, K.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.129-134,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
10.

Conference Proceedings
Conference Proceedings
10. EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GaAs-ON-Si
Nozaki, S. ; Noto, N. ; Okada, M. ; Egawa, T. ; Soga,. T ; Jimbo, T. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.235-240,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148