1.

Conference Proceedings
Conference Proceedings
1. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
Godignon, P. ; Jorda, X. ; Nipoti, R. ; Cardinali, G. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1317-1320,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
Godignon, P. ; Jorda, X. ; Nipoti, R. ; Cardinali, G. ; Mestres, N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1317-1320,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. A Highly Effective Edge Termination Design for SiC Planar High Power Devices
Perez, R. ; Mestres, N. ; Blanque, S. ; Tournier, D. ; Jorda, X. ; Godignon, P. ; Nipoti, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1253-1256,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460