1.

Conference Proceedings
Conference Proceedings
1. Damage Reduction in Channeled Ion Implanted 6H-SiC
Morvan, E. ; Mestres, N. ; Campos, F. J. ; Pascual, J. ; Anders, Hallen ; Linnarsson, M. K. ; Kuznetsov, A. Yu.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.893-896,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
2.

Conference Proceedings
Conference Proceedings
2. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1363-1366,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. SiC Microwave Power Devices
Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.669-674,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
Bluet, J. M. ; Gassoumi, M. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Guillot, G. ; Morvan, E. ; Dua, C. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.865-868,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Channeled Implants in 6H Silicon Carbide
Janson, M. S. ; Hallen, A. ; Godignon, P. ; Kuznetsov, A. Yu. ; Linnarsson, M. K. ; Morvan, E. ; Svensson, B. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.889-892,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC
Mestres, N. ; Alsina, F. ; Campos, F. J. ; Pascual, J. ; Morvan, E. ; Godignon, P. ; Millan, J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.663-666,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
7.

Conference Proceedings
Conference Proceedings
7. Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
Kerlain, A. ; Morvan, E. ; Dua, C. ; Caillas, N. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1177-1180,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Lazar, M. ; Ottaviani, L. ; Locatelli, M.L. ; Raynaud, C. ; Planson, D. ; Morvan, E. ; Godignon, P. ; Skorupa, W. ; Chante, J.P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.571-574,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
9.

Conference Proceedings
Conference Proceedings
9. Doping of Silicon Carbide by Ion Implantation
Svensson, B.G. ; Hallen, A. ; Linnarsson, M.K. ; Kuznetsov, A.Yu. ; Janson, M.S ; Aberg, D. ; Oesterman, J. ; Persson, P.O.A. ; Hultman, L. ; Storasta, L. ; Carlsson, F.H.C. ; Bergman, J.P. ; Jagadish, C. ; Morvan, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.549-554,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates
Gassoumi, M. ; Sghaier, N. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Bluet, J.M. ; Guillot, G. ; Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1185-1188,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
11.

Conference Proceedings
Conference Proceedings
11. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs
Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1363-1366,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
12.

Conference Proceedings
Conference Proceedings
12. Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Blanque, S. ; Perez, R. ; Godignon, P. ; Mestres, N. ; Morvan, E. ; Kerlain, A. ; Dua, C. ; Brylinski, C. ; Zielinski, M. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.893-896,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
13.

Conference Proceedings
Conference Proceedings
13. Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics
Morvan, E. ; Kerlain, A. ; Dua, C. ; Brylinski, C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.731-736,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436