1.

Conference Proceedings
Conference Proceedings
1. Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
Ferro, G. ; Polychroniadis, E.K. ; Panknin, D. ; Skorupa, W. ; Stoemenos, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1563-1566,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
Soueidan, M. ; Ferro, G. ; Stoemenos, J. ; Polychroniadis, E.K. ; Chaussende, D. ; Soares, F. ; Juillaguet, S. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.287-290,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxiat Growth on on-axis α-SiC (0001) at Low Temperature
Soueidan, M. ; Ferro, G. ; Cauwet, F. ; Mollet, L. ; Jacquier, C. ; Younes, G. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.271-274,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Is the Al Solubility Limit in SiC Temperature Dependent or not?
Jacquier, C. ; Ferro, G. ; Zielinski, M. ; Polychroniadis, E. K. ; Andreadou, A. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.125-128,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilane
Sartel, C. ; Souliere, V. ; Zielinski, M. ; Monteil, Y. ; Camassel, J. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.121-124,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on α-Cut (1120) 4H-SiC Substrates
Blanc, C. ; Zielinski, M. ; Souliere, V. ; Sartel, C. ; Juillaguet, S. ; Contreras, S. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.117-120,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS
Aboughe-Nze, P. ; Planes, N. ; Ravetz, M. ; Fraisse, B. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Monteil, Y. ; Rushworth, S. ; Camassel, J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
8.

Conference Proceedings
Conference Proceedings
8. Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
Mendez, D. ; Aouni, A. ; Araujo, D. ; Bustarret, E. ; Ferro, G. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.555-558,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Initial Stages of ss-SiC Growth by Chemical Vapor Deposition on an Ultrathin SiC Buffer Layer on Si(100)
Ferro, G. ; Thevenot, V. ; Vincent, H. ; Monteil, Y. ; Bouix, J.
Pub. info.: Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11.  pp.1409-1416,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-25
10.

Conference Proceedings
Conference Proceedings
10. Control of Stress With Growth Conditions and Mechanical Parameters Determination of 3C-SiC Heteroepitaxial Thin Films
Gourbeyre, C. ; Chassagne, T ; Berre, M. Le ; Ferro, G. ; Malhaire, C. ; Monteil, Y. ; Bardier, D.
Pub. info.: Materials science of microelectromechanical systems (MEMS) devices III : symposium held November 27-28, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 657
11.

Conference Proceedings
Conference Proceedings
11. Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy
Ferro, G. ; Panknin, D. ; Polychroniadis, E. K. ; Monteil, Y. ; Skorupa, W. ; Stoemenos, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.295-298,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
12.

Conference Proceedings
Conference Proceedings
12. P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth
Lazar, M. ; Jacquier, C. ; Dubois, C. ; Raynaud, C. ; Ferro, G. ; Planson, D. ; Brosselard, P. ; Monteil, Y. ; Chante, J. P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.633-636,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
13.

Conference Proceedings
Conference Proceedings
13. Characterization of 3C-SiC/SOI Deposited with HMDS
Planes, N. ; Aboughe-Nze, P. ; Ravetz, M. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Fraisse, B. ; Camassel, J. ; Monteil, Y. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.599-602,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
14.

Conference Proceedings
Conference Proceedings
14. SiC Thin Film Characterization and Stress Measurements for High-Temperature Sensors Applications
Gourbeyre, C. ; Aboughe-nze, P. ; Malhaire, C. ; Berre, M. ; Monteil, Y. ; Barbier, D.
Pub. info.: Materials science of microelectromechanical systems (MEMS) devices : symposium held December 1-2, 1998, Boston, Massachusetts, U.S.A..  pp.91-96,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 546
15.

Conference Proceedings
Conference Proceedings
15. Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt
Godignon, P. ; Jacquier, C. ; Blanque, S. ; Montserrat, J. ; Ferro, G. ; Contreras, S. ; Zielinski, M. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.421-424,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
16.

Conference Proceedings
Conference Proceedings
16. Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
Voelskow, M. ; Panknin, D. ; Polychroniadis, E. K. ; Ferro, G. ; Godignion, P. ; Mestres, N. ; Skorupa, W. ; Monteil, Y. ; Stoemenos, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.233-236,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
17.

Conference Proceedings
Conference Proceedings
17. Planar Defects, Voids and their Relationship in 3C-SiC Layers
Mendez, D. ; Aouni, A. ; Araujo, D. ; Ferro, G. ; Monteil, Y. ; Bustarret, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.189-192,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
18.

Conference Proceedings
Conference Proceedings
18. Comparative Evaluation of Free-Standing 3C-SiC Crystals
Polychroniadis, E. K. ; Balloud, C. ; Juillaguet, S. ; Ferro, G. ; Monteil, Y. ; Camassel, J. ; Stoemenos, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.229-232,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
19.

Conference Proceedings
Conference Proceedings
19. Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
Jacquier, C. ; Ferro, G. ; Balloud, C. ; Zielinski, M. ; Camassel, J. ; Polychroniadis, E. ; Stoemenos, J. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.735-738,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
20.

Conference Proceedings
Conference Proceedings
20. Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
Founta, S. ; Gogneau, N. ; Martinez-Guerrero, E. ; Ferro, G. ; Monteil, Y. ; Daudin, B. ; Mariette, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1561-1564,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
21.

Conference Proceedings
Conference Proceedings
21. Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers
Ferro, G. ; Panknin, D. ; Stoemenos, J. ; Balloud, C. ; Camassel, J. ; Polychroniadis, E. ; Monteil, Y. ; Skorupa, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.313-316,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
22.

Conference Proceedings
Conference Proceedings
22. Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers
Juillaguet, S. ; Balloud, C. ; Pernot, J. ; Sartel, C. ; Souliere, V. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.577-580,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
23.

Conference Proceedings
Conference Proceedings
23. 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
Aboughe-Nze, P. ; Chassagne, T. ; Chaussende, D. ; Monteil, Y. ; Cauwet, F. ; Bustarret, E. ; Deneuville, A. ; Bentoumi, G. ; Martinez-Guerrerro, E. ; Daudin, B. ; Feuillet, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1467-1470,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
24.

Conference Proceedings
Conference Proceedings
24. Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
Juillaguet, S. ; Zielinski, M. ; Balloud, C. ; Sartel, C. ; Consejo, C. ; Boyer, B. ; Souliere, V. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.775-778,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
25.

Conference Proceedings
Conference Proceedings
25. SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC
Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.307-310,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
27.

Conference Proceedings
Conference Proceedings
27. Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
Sartel, C. ; Souliere, V. ; Dazord, J. ; Monteil, Y. ; El-Harrouni, I. ; Bluet, J.M. ; Guillot, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.263-266,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
28.

Conference Proceedings
Conference Proceedings
28. Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Ferro, G. ; Chaussende, D. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.287-290,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
29.

Conference Proceedings
Conference Proceedings
29. Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process
Polychroniadis, E. ; Stoemenos, J. ; Ferro, G. ; Monteil, Y. ; Panknin, D. ; Skorupa, W.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.351-354,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
30.

Conference Proceedings
Conference Proceedings
30. Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
Sartel, C. ; Bluet, J.M. ; Souliere, V. ; El-Harrouni, I. ; Monteil, Y. ; Mermoux, M. ; Guillot, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.165-168,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
31.

Conference Proceedings
Conference Proceedings
31. Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates
Younes, G. ; Ferro, G. ; Jacquier, C. ; Dazord, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.119-124,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
32.

Conference Proceedings
Conference Proceedings
32. Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Viala, J.C. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.181-184,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
33.

Conference Proceedings
Conference Proceedings
33. Growth at High Rates and Characterization of Bulk 3C-SiC Material
Ferro, G. ; Balloud, C. ; Juillaguet, S. ; Vicente, P. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.115-118,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
34.

Conference Proceedings
Conference Proceedings
34. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) ? a Promising Technique to Produce High Quality Cubic SiC Layers
Skorupa, W. ; Panknin, D. ; Anwand, W. ; Voelskow, M. ; Ferro, G. ; Monteil, Y. ; Leycuras, A. ; Pezoldt, J. ; McMahon, R. ; Smith, M. ; Camassel, J. ; Stoemenos, J. ; Polychroniadis, E. ; Godignon, P. ; Mestres, N. ; Turover, D. ; Rushworth, S. ; Friedberger, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.175-180,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
35.

Conference Proceedings
Conference Proceedings
35. Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS
Sartel, C. ; Souliere, V. ; Dazord, J. ; Monteil, Y. ; El-Harrouni, I. ; Bluet, J.M. ; Guillot, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.263-266,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
36.

Conference Proceedings
Conference Proceedings
36. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
37.

Conference Proceedings
Conference Proceedings
37. Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
Ferro, G. ; Chaussende, D. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.287-290,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
38.

Conference Proceedings
Conference Proceedings
38. Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates
Blanc, C. ; Sartel, C. ; Souliere, V. ; Juillaguet, S. ; Monteil, Y. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.237-240,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
39.

Conference Proceedings
Conference Proceedings
39. Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
Chassagne, T. ; Ferro, G. ; Haas, H. ; Leycuras, A. ; Mank, H. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.265-268,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
40.

Conference Proceedings
Conference Proceedings
40. How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
Chassagne, T. ; Ferro, G. ; Gourbeyre, C. ; Berre, M.Le ; Barbier, D. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.155-158,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
41.

Conference Proceedings
Conference Proceedings
41. Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
Abdou, F. ; Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.245-248,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
42.

Conference Proceedings
Conference Proceedings
42. Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
Sartel, C. ; Balloud, C. ; Souliere, V. ; Juillaguet, S. ; Dazord, J. ; Monteil, Y. ; Camassel, J. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.217-220,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
43.

Conference Proceedings
Conference Proceedings
43. Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)
Ferro, G. ; Camassel, J. ; Juillaguet, S. ; Balloud, C. ; Polychroniadis, E.K. ; Stoimenos, Y. ; Seigle-Ferrand, P. ; Dazord, J. ; Monteil, Y. ; Rushworth, S.A. ; Smith, L.M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.281-284,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
44.

Conference Proceedings
Conference Proceedings
44. Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
Bustarret, E. ; Araujo, D. ; Mendez, D. ; Morales, F.M. ; Pacheco, F.J. ; Molina, S.I. ; Rochat, N. ; Ferro, G. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.277-280,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
45.

Conference Proceedings
Conference Proceedings
45. Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
Jacquier, C. ; Ferro, G. ; Godignon, P. ; Montserrat, J. ; Dezellus, O. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.241-244,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
46.

Conference Proceedings
Conference Proceedings
46. Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
Chaussende, D. ; Jacquier, C. ; Ferro, G. ; Viala, J.C. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.85-90,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
47.

Conference Proceedings
Conference Proceedings
47. SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC
Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.307-310,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
48.

Conference Proceedings
Conference Proceedings
48. Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
Ferro, G. ; Soueidan, M. ; Jacquier, C. ; Godignon, P. ; Stauden, T. ; Pezoldt, J. ; Lazar, M. ; Montserrat, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.275-278,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529