1.

Conference Proceedings
Conference Proceedings
1. Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxiat Growth on on-axis α-SiC (0001) at Low Temperature
Soueidan, M. ; Ferro, G. ; Cauwet, F. ; Mollet, L. ; Jacquier, C. ; Younes, G. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.271-274,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Is the Al Solubility Limit in SiC Temperature Dependent or not?
Jacquier, C. ; Ferro, G. ; Zielinski, M. ; Polychroniadis, E. K. ; Andreadou, A. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.125-128,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth
Lazar, M. ; Jacquier, C. ; Dubois, C. ; Raynaud, C. ; Ferro, G. ; Planson, D. ; Brosselard, P. ; Monteil, Y. ; Chante, J. P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.633-636,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt
Godignon, P. ; Jacquier, C. ; Blanque, S. ; Montserrat, J. ; Ferro, G. ; Contreras, S. ; Zielinski, M. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.421-424,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt
Jacquier, C. ; Ferro, G. ; Balloud, C. ; Zielinski, M. ; Camassel, J. ; Polychroniadis, E. ; Stoemenos, J. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.735-738,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. SiO2 as Oxygen Source for the Chemical Vapor Transport of SiC
Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.307-310,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates
Younes, G. ; Ferro, G. ; Jacquier, C. ; Dazord, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.119-124,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Viala, J.C. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.181-184,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
Abdou, F. ; Jacquier, C. ; Ferro, G. ; Cauwet, F. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.245-248,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. Vapour-Liquid-Solid Induced Localised Growth of Heavily Al Doped 4H-SiC on Patterned Substrate
Jacquier, C. ; Ferro, G. ; Godignon, P. ; Montserrat, J. ; Dezellus, O. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.241-244,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460