Initial Stages of ss-SiC Growth by Chemical Vapor Deposition on an Ultrathin SiC Buffer Layer on Si(100)

Initial Stages of ss-SiC Growth by Chemical Vapor Deposition on an Ultrathin SiC Buffer Layer on Si(100)

Author(s):

Publication title:

Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-25

Pub. Year:

1997

Page(from):

1409

Page(to):

1416

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771788 [1566771781]

Language:

English

Call no.:

E23400/97-25

Type:

Conference Proceedings

Details

TDL ID:	ZA00013887
Series ID:	PA00000028
Conf. info. (Name):	International Conference on Chemical Vapor Deposition ; EUROCVD
Conf. info. (Number):	14th ; 11th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.09.05-1997.09.09

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