1.

Conference Proceedings
Conference Proceedings
1. A NEW METASTABLE DEFECT IN SILICON, OPTICAL PROPERTIES AND AN INVESTIGATION OF THE MECHANISM CAUSING THE CONFIGURATIONAL CHANGE
Svensson, J.H. ; Monemar, B.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.265-268,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. OPTICAL PROPERTIES OF NOVEL VIBRONIC BANDS IN ELECTRON-IRRADIATED TIN DOPED SILICON
Svensson, J.H. ; Monemar, B. ; Svensson, B.G.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.261-264,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
3.

Conference Proceedings
Conference Proceedings
3. ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUND EXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE
Chen, W.M. ; Henry, A. ; Janzen, E. ; Monemar, B. ; Thewalt, M.L.W.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.303-306,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
4.

Conference Proceedings
Conference Proceedings
4. DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS IN ELECTRON-IRRADIATED SILICON
Awadelkarim, O.O. ; Henry, A. ; Monemar, B. ; Lindstrom, J.L.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.283-286,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
5.

Conference Proceedings
Conference Proceedings
5. MODIFIED OPTICALLY DETECTED MAGNETIC RESONANCE TECHNIQUE FOR STUDIES OF DEFECTS IN Si AND GaAs
Chen, W.M. ; Monemar, B.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.85-88,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
6.

Conference Proceedings
Conference Proceedings
6. EFFECTS OF CONFINEMENT ON THE OPTICAL PROPERTIES OF A SHALLOW ACCEPTOR AND ITS BOUND EXCITON IN NARROW GaAs/A1GaAs QUANTUM WELLS
Holtz, P.O. ; Sundaram, M. ; Rune, G.C. ; Monemar, B. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.331-336,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
7.

Conference Proceedings
Conference Proceedings
7. OPTICALLY DETECTED MAGNETIC RESONANCE OF A HYDROGEN-RELATED COMPLEX DEFECT IN SILICON
Chen, W.M. ; Awadelkarim, O.O. ; Monemar, B. ; Lindstrom, J.L. ; Oehrlein, G.S.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.377-382,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
8.

Conference Proceedings
Conference Proceedings
8. INTRINSIC LUMINESCENCE OF GaAs/A1GaAs HETEROJUNCTIONS INA TRANSVERSE ELECTRIC FIELD
Zhao, Q.X. ; Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Hallin, C. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.337-342,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
9.

Conference Proceedings
Conference Proceedings
9. DECAY MEASUREMENTS OF FRE AND BOUND EXCITON RECOMBINATION IN DOPED GaAs/GaA1As QUANTUM WELLS
Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.325-330,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
10.

Conference Proceedings
Conference Proceedings
10. *COMPLEX DEFECTS IN SEMICONDUCTORS
Monemar, B.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.39-50,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
11.

Conference Proceedings
Conference Proceedings
11. TIME RESOLVED MEASUREMENTS OF RADIATIVE RECOMBINATION IN GaAs/A1GaAs HETEROSTRUCTURES
Bergman, J.P. ; Zhao, Q.X. ; Holtz, P.-O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.703-706,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
12.

Conference Proceedings
Conference Proceedings
12. HOT-CARRIER EFFECTS ON OPTICAL PROPERTIES OF GaAs/A1xGa1-xAs QUANTUM WELLS
Chen, W.M. ; Holtz, P.O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.707-712,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
13.

Conference Proceedings
Conference Proceedings
13. OPTICAL DETECTION OF MAGNETIC RESONANCE (ODMR) STUDIES OF THE ELECTRONIC STRUCTURE OF COMPLEX DEFECTS IN GaP
Chen, W. M. ; Godlewski, M. ; Monemar, B. ; Gislason, H. P.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.443-448,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
14.

Conference Proceedings
Conference Proceedings
14. OPTICALLY DETECTED MAGNETIC RESONANCE STUDIES OF COMPLEX ANTISITE-RELATED DEFECTS IN BULK LEC GaP
Chen, W. M. ; Godlewski, M. ; Monemar, B. ; Gislason, H. P.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.467-470,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
15.

Conference Proceedings
Conference Proceedings
15. SPECTROSCOPY OF IMPURITIES AND COMPLEX DEFECTS IN SILICON IN ELECTRIC AND MICROWAVE FIELDS
Godlewski, M. ; Weman, H. ; Wang, F. P. ; Monemar, B. ; Chen, W. M. ; Zhao, Q. X.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.117-120,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
16.

Conference Proceedings
Conference Proceedings
16. THE DEEP 0.11eV MANGANESE ACCEPTOR LEVEL IN GaAs
Kleverman, M. ; Janzen, E. ; Linnarsson, M. ; Monemar, B.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.207-210,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
17.

Conference Proceedings
Conference Proceedings
17. PHOTOLUMINESCENCE STUDY OF GaAs DIFFUSED WITH Li
Gislason, H.P. ; Sveinbjornsson, E.O. ; Monemar, B. ; Linnarson, M.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.127-132,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
18.

Conference Proceedings
Conference Proceedings
18. STRAIN INDUCED INTRINSIC QUANTUM WELLS AS THE ORIGIN OF BROAD BAND PHOTOLUMINESCENCE IN SILICON CONTAINING EXTENDED DEFECTS
Weman, H. ; Monemar, B.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.257-260,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
19.

Conference Proceedings
Conference Proceedings
19. THE ELECTRONIC STRUCTURE OF THE "0.15 Ev" Cu ACCEPTOR LEVEL IN GaAs
Janzen, E. ; Linnarsson, M. ; Monemar, B. ; Kleverman, M.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.169-174,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
20.

Conference Proceedings
Conference Proceedings
20. OPTICAL SPECTROSCOPY OF DEFECTS IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS
Monemar, B. ; Holtz, P. O. ; Bergman, J. P. ; Zhao, Q. X. ; Harris, C. I. ; Ferreira, A. C. ; Sundaram, M. ; Merz, J. L. ; Gossard, A. C.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.19-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
21.

Conference Proceedings
Conference Proceedings
21. MAGNETOOPTICAL STUDIES OF ACCEPTORS CONFINED IN GaAs/AlGaAs QUANTUM WELLS
Holtz, P. O. ; Zhao, Q. X. ; Monemar, B. ; Pasquarello, A. ; Sundaram, M. ; Merz, J. L. ; Gossard, A. C.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.73-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
22.

Conference Proceedings
Conference Proceedings
22. Efficient Nonradiative Recombination Centers in MBE-Grown Si and SiGe/Si Heterostructures
Chen, W. M. ; Buyanova, I. A. ; Henry, A. ; Ni, W.-X. ; Hansson, G. V. ; Monemar, B.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.135-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
23.

Conference Proceedings
Conference Proceedings
23. Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
Monemar, B. ; Bergman, J. P. ; Dalfors, J. ; Pozina, G. ; Sernelius, B. E. ; Holtz, P. O. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G2.5.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
24.

Conference Proceedings
Conference Proceedings
24. PHOTOLUMINESCENCE STUDY OF HYDROGEN-RELATED DEFECTS IN SILICON
Henry, A. ; Monemar, B. ; Lindstrom, J. L. ; Zhang, Y. ; Corbett, J. W.
Pub. info.: Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.261-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 324
25.

Conference Proceedings
Conference Proceedings
25. Eu and Yb excitation mechanisms in ZnS, CaS, SrS and InP
Goldlewski, M. ; Swiatek, K. ; Monemar, B.
Pub. info.: Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.275-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 301
26.

Conference Proceedings
Conference Proceedings
26. OPTICAL STUDIES OF FREE AND ACCEPTOR-BOUND EXCITONS IN GaAs/AlGaAs SYMMETRIC COUPLED DOUBLE QUANTUM WELL STRUCTURES
Zhao, Q. X. ; Holtz, P. O. ; Monemar, B. ; Fimland, B. O. ; Johannessen, K.
Pub. info.: Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A..  pp.383-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 326
27.

Conference Proceedings
Conference Proceedings
27. Relaxation Phenomena in GaN/AlN/6H-SiC Heterostructures
Edwards, N. V. ; Batchelor, A. D. ; Buyanova, I. A. ; Madsen, L. D. ; Bremser, M. D. ; Davis, R. F. ; Aspnes, D. E. ; Monemar, B.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.78.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
28.

Conference Proceedings
Conference Proceedings
28. Hydride vapour phase homoepitaxial growth of GaN on MOCVD-Grown 'Templates'
Paskova, T. ; Tungasmita, S. ; Valcheva, E. ; Svedberg, E. B. ; Arnaudov, B. ; Evtimova, S. ; Persson, P. A. ; Henry, A. ; Beccard, R. ; Heuken, M. ; Monemar, B.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.14.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
29.

Conference Proceedings
Conference Proceedings
29. Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
Chen, W. M. ; Buyanova, I. A. ; Wagner, Mt. ; Monemar, B. ; Lindstrom, J. L. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G5.4.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
30.

Conference Proceedings
Conference Proceedings
30. Deep Photoluminescence Bands in MBE Grown Si and SiGe
Buyanova, I. A. ; Henry, A. ; Chen, W. M. ; Ni, W. X. ; Hansson, G. V. ; Monemar, B.
Pub. info.: Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A..  pp.405-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 379
31.

Conference Proceedings
Conference Proceedings
31. Defects in Low-Temperature MBE-Grown Si and SiGe/Si Structures
Chen, W. M. ; Buyanova, I. A. ; Monemar, B.
Pub. info.: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.355-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 442
32.

Conference Proceedings
Conference Proceedings
32. Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
Paskova, T. ; Svedberg, E. B. ; Madsen, L. D. ; Yakimova, R. ; Ivanov, I. G. ; Henry, A. ; Monemar, B.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.16.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
33.

Conference Proceedings
Conference Proceedings
33. Luminescence of a New Material: GaN Grown on NdGaO3
Korona, K. P. ; Pakula, K. ; Wysmolek, A. ; Baranowski, J. M. ; Bergman, J. P. ; Monemar, B. ; Lukasiewicz, T. ; Luczynski, Z.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.725-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
34.

Conference Proceedings
Conference Proceedings
34. Electronic Structure and Temperature Dependence of Excitons in GaN
Buyanova, I. A. ; Bergman, J. P. ; Li, W. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.675-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
35.

Conference Proceedings
Conference Proceedings
35. Influence of Growth Conditions on the Thermal Quenching of Photoluminescence From SiGe/Si Quantum Structures
Buyanova, I. A. ; Chen, W. M. ; Ni, W-X. ; Hansson, G. V. ; Monemar, B.
Pub. info.: Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.295-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 533
36.

Conference Proceedings
Conference Proceedings
36. MBE Growth and Characterization of Er/O- and Er/F-Doped Si Light-Emitting Structures
Ni, W-X. ; Du, C-X. ; Joelsson, K. B. ; Hansson, G. V. ; Pozina, G. ; Buyanova, I. A. ; Chen, W. M. ; Monemar, B.
Pub. info.: Materials and devices for silicon-based optoelectronics : symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A..  pp.133-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 486
37.

Conference Proceedings
Conference Proceedings
37. INVESTIGATION OF BI-EXCITON FORMATION IN DOPED GaAsAlxGa(1-x)As QUANTUM WELLS
Harris, C. I. ; Monemar, B. ; Holtz, P. O. ; Sundaram, M. ; Merz, J. L. ; Gossard, A. C.
Pub. info.: Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A..  pp.507-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 326
38.

Conference Proceedings
Conference Proceedings
38. Exciton Lifetimes in GaN
Bergman, J. P. ; Harris, C. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.709-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
39.

Conference Proceedings
Conference Proceedings
39. Interactions of LO Phonons With Bound Excitons in Homoepitaxial GaN
Korona, K. P. ; Wysmolek, A. ; Baranowski, J. M. ; Pakula, K. ; Bergman, J. P. ; Monemar, B. ; Grzegory, I. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.501-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
40.

Conference Proceedings
Conference Proceedings
40. Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures
Buyanov, A. V. ; Sandberg, J. ; Bergman, J. P. ; Sernelius, B. E. ; Holtz, P-O. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.585-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
41.

Conference Proceedings
Conference Proceedings
41. Optical Properties of InGaN/GaN Multiquantum-Well Structures
Bergman, J. P. ; Saksulv, N. ; Dalfors, J. ; Holtz, P. O. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.631-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
42.

Conference Proceedings
Conference Proceedings
42. High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress
Paskova, T. ; Suski, T. ; Bockowski, M. ; Paskov, P. P. ; Darakchieva, V. ; Monemar, B. ; Tuomisto, F. ; Saarinen, K. ; Ashkenov, N. ; Schubert, M. ; Roder, C. ; Hommel, D.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.429-434,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
43.

Conference Proceedings
Conference Proceedings
43. Formation and Dissociation of Hydrogen-Related Defect Centers in Mg-Doped GaN
Gelhausen, O. ; Phillips, M.R ; Goldys, E.M. ; Paskova, T. ; Monemar, B. ; Strassburg, M. ; Hoffmann, A.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.497-502,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
44.

Conference Proceedings
Conference Proceedings
44. Strain Evolution and Phonons in AlN/GaN Superlattices
Darakchieva, V. ; Paskov, P.P. ; Schubert, M. ; Valcheva, B. ; Paskova, T. ; Arwin, H. ; Monemar, B. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.741-746,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
45.

Conference Proceedings
Conference Proceedings
45. Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN
Paskov, P.P. ; Paskova, T. ; Holtz, P.O. ; Monemar, B.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.601-606,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
46.

Conference Proceedings
Conference Proceedings
46. A New Mechanism in the Growth Process of GaN by HVPE
Trassoudaine, A. ; Aujol, E. ; Cadoret, R. ; Paskova, T. ; Monemar, B.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
47.

Conference Proceedings
Conference Proceedings
47. Growth and characterisation of free-standing hydride vapor phase epitaxy GaN on two-step epitaxial lateral overgrown GaN template
Gogova, D. ; Kanev, S. ; Monemar, B. ; Ivanov, I. G. ; Yakimova, R. ; Talik, E.
Pub. info.: EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium.  pp.691-698,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-09
48.

Conference Proceedings
Conference Proceedings
48. Spin Polarization and Injection in ZnMnSe/ZnCdSe Heterostructures
Buyanova, I.A. ; Chen, W.M. ; Ivanov, I.G. ; Monemar, B. ; Toropov, A.A. ; Terent've, Ya.V. ; Sorokin, S.V. ; Lebedev, A.V. ; Ivanov, S.V. ; Kop'ev, P.S.
Pub. info.: Spintronics : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A..  pp.15-20,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 690
49.

Conference Proceedings
Conference Proceedings
49. Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
Son, N. T. ; Hai, P. N. ; Chen, W. M. ; Hallin, C. ; Monemar, B. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.5663-566,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
50.

Conference Proceedings
Conference Proceedings
50. Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells
Monemar, B. ; Paskov, P.P. ; Bergman, J.P. ; Pozina, G. ; Kamiyama, S. ; Iwaya, M. ; Amano, H. ; Akasaki, I.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.501-508,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693