Ion-Beam Synthesized Semiconducting β-FeSi2 Controlled by Annealing Procedures and Phase Transitions

Ion-Beam Synthesized Semiconducting β-FeSi2 Controlled by Annealing Procedures and Phase Transitions

Author(s):

Publication title:

Materials and devices for silicon-based optoelectronics : symposium held December 1-3, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

486

Pub. Year:

1998

Page(from):

329

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993914 [1558993916]

Language:

English

Call no.:

M23500/486

Type:

Conference Proceedings

Details

TDL ID:	ZA00019842
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials and devices for silicon-based optoelectronics
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.03

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