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12 results

Conference Proceedings

1. The Effect of Doping on Nitrogen Activation Energy Level in 4H-SiC

Evwaraye, A. O. ; Smith, S. R. ; Mitchel, W. C.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.187-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

Conference Proceedings

2. Aluminum Acceptors in Inequivalent Sites in 4H-SiC

Smith, S. R. ; Evwaraye, A. O. ; Mitchel, W. C.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.193-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

Conference Proceedings

3. CHARACTERIZATION OF DEFECTS IN N-TYPE 6H-SiC SINGLE CRYSTALS BY OPTICAL ADMITTANCE SPECTROSCOPY

Evwaraye, A. O. ; Smith, S. R. ; Mitchel, W. C.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.353-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

4. Thermal and Optical Admittance Spectroscopy Studies of Defects in 15R-SiC

Smith, S. R. ; Evwaraye, A. O. ; Mitchel, W. C.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.705-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

5. Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals

Evwaraye, A. O. ; Smith, S. R. ; Mitchel, W. C.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.539-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

6. Impurity Conduction in n-Type 4H-SiC

Evwaraye, A. O. ; Smith, S. R. ; Mitchel, W. C. ; Roth, M. D.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.637-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

7. Vanadium-free Semi-insulating 4H-SiC Substrates

Mitchel, W. C. ; Saxler, A. ; Perrin, R. ; Goldstein, J. ; Smith, S. R. ; Evwaraye, A. O. ; Solomon, J. S. ; Brady, M. ; Tsvetkov, V. ; Carter, C. H. Jr.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.21-24, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples

Evwaraye, A. O. ; Smith, S. R. ; Mitchel, W. C.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.237-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

9. Characterization of Vanadium-doped 4H-SiC using optical admittance spectroscopy

Smith, S. R. ; Evwaraye, A. O. ; Mitchel, W. C. ; Solomon, J. S. ; Goldstein, J.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.253-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

10.

Conference Proceedings

10. Temperature Dependence of Metal-Semiconductor Contacts on 6H-SiC

Smith, S. R. ; Evwaraye, A. O. ; Mitchel, W. C.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.835-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

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