1.

Conference Proceedings
Conference Proceedings
1. Fine Structure and Magneto-optics of Excitonic Levels in Wurtzite GaN
Eckey, L. ; Hoffmann, A. ; Thurian, P. ; Broser, I. ; Meyer, B. K. ; Hiramatsu, K.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.555-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
2.

Conference Proceedings
Conference Proceedings
2. Identification of Transition Metals in GaN
Pressel, K. ; Heitz, R. ; Eckey, L. ; Loa, I. ; Thurian, P. ; Hoffmann, A. ; Meyer, B. K. ; Fischer, S. ; Wetzel, C. ; Haller, E. E.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.491-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
3.

Conference Proceedings
Conference Proceedings
3. Spatially-Resolved Photoluminescence and Raman Study on the GaN/Substrate Interface
Siegle, H. ; Thurian, P. ; Eckey, L. ; Hoffmann, A. ; Thomsen, C. ; Meyer, B. K. ; Detchprohm, T. ; Hiramatsu, K. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.577-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
4.

Conference Proceedings
Conference Proceedings
4. Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN
Eckey, L. ; Hoffmann, A. ; Heitz, R. ; Broser, I. ; Meyer, B. K. ; Detchprohm, T. ; Hiramatsu, K. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.589-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
5.

Conference Proceedings
Conference Proceedings
5. Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers
Meyer, B. K. ; Volm, D. ; Wetzel, C. ; Eckey, L. ; Holst, J.-Ch. ; Maxim, P. ; Heitz, R. ; Hoffmann, A. ; Broser, I. ; Mokhov, E. N. ; Baranov, P. G. ; Qiu, C. ; Pankove, J. I.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.521-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378