1.

Conference Proceedings
Conference Proceedings
1. Growth of Scandium Magnesium Oxide on GaN
Onstine, A. H. ; Herrero, A. ; Gila, B. P. ; Kim, J. ; Mehandru, R. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.397-402,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
2.

Conference Proceedings
Conference Proceedings
2. The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation
Gila, B. P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J. R. ; Onstine, A. H. ; Lambers, E. ; Siebein, K. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.385-396,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
3.

Conference Proceedings
Conference Proceedings
3. Surface State Characterization Methods for Si02 on 4H-SiC
LaRoche, I.R. ; Kim, J. ; Johnson, J.W. ; Luo, B. ; Kang, B.S. ; Mehandru, R. ; Irokawa, Y. ; Pearton, S.I. ; Chung, G. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.282-291,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
4.

Conference Proceedings
Conference Proceedings
4. Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics
Gila, B.P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J.R. ; Onstine, A.H. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.212-223,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
5.

Conference Proceedings
Conference Proceedings
5. Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R. ; Gila, B.P. ; Onstine, A.H. ; Pearton, S.J. ; Kim, J. ; Luo, B. ; Mehandru, R. ; Ran, F. ; Gillespie, J.K. ; Fitch, R.C. ; Sewell, J. ; Dettmer, R. ; Via, G.D. ; Crespo, A. ; Jenkins, T.J. ; Irokawa, Y.
Pub. info.: Dielectrics in emerging technologies : proceedings of the international symposium.  pp.330-341,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-1
6.

Conference Proceedings
Conference Proceedings
6. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide
Kim. J. ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo. B. ; Oristine, A. ; Abernathy, C.R. ; Prarton, S.J. ; Ren, F.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.184-190,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
7.

Conference Proceedings
Conference Proceedings
7. Characterization of InGaAs self-mixing detectors for chirp amplitude-modulated ladar (CAML)
Aliberti, K. ; Ruff, W.C. ; Shen, H. ; Newman, P.G. ; Giza, M.M. ; Sarney, W. ; Stead, M.R. ; Dammann, J. ; Mehandru, R. ; Ren, F.
Pub. info.: Laser radar technology and applications IX : 13-15 April 2004, Oriando, Florida, USA.  pp.99-110,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5412
8.

Conference Proceedings
Conference Proceedings
8. Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments
Kim, J. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.653-658,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
9.

Conference Proceedings
Conference Proceedings
9. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.659-664,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
10.

Conference Proceedings
Conference Proceedings
10. Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes
Luo, B. ; Kim, J. ; Mehandru, R. ; Ren, F. ; Lee, K.P. ; Pearton, S.J. ; Polyakov, A.Y. ; Smirnov, N.B. ; Govorkov, A.V. ; Kozhukhova, E.A. ; Osinsky, A.V. ; Norris, P.E.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.335-340,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
11.

Conference Proceedings
Conference Proceedings
11. Mixing characteristics of InAlAs/InGaAs metal-semiconductor-metal optoelectronic mixers
Aliberti, K. ; Shen, H. ; Stann, B. ; Mehandru, R. ; Ren, F.
Pub. info.: Laser radar technology and applications VIII : 22-25 April 2003, Oriando, Florida, USA.  pp.369-376,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5086
12.

Conference Proceedings
Conference Proceedings
12. Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes
Allums, K. ; Luo, B. ; Mehandru, R. ; Gila, B.P. ; Dwivedi, R. ; Fogarty, T.N. ; Wilkins, R. ; Abernathy, C.R. ; Ren, F. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.713-718,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
13.

Conference Proceedings
Conference Proceedings
13. Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Mehandru, R. ; Gila, B.P. ; Kim, J. ; Johnson, J.W. ; Lee, K.P. ; Luo, B. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.767-772,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
14.

Conference Proceedings
Conference Proceedings
14. Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
Kim, Jihyun ; Gila, B.P. ; Mehandru, R. ; Johnson, J.W. ; Shin, J.H. ; Lee, K.P. ; Luo, B. ; Onstine, A ; Abernathy, C.R. ; Pearton, S.J.
Pub. info.: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.699-712,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 693
15.

Conference Proceedings
Conference Proceedings
15. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
Ren, F. ; Luo, B. ; Kim, J. ; Mehandru, R. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.291-304,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
16.

Conference Proceedings
Conference Proceedings
16. Growth of MgCaO on GaN
Onstine, A.H. ; Gila, B.P. ; Kim, J. ; Herrero, A. ; Mehandru, R. ; Abernathy, C.R. ; Ren, B.F. ; Pearton, S.J.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.344-349,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
17.

Conference Proceedings
Conference Proceedings
17. Kinetics of AlxGa1-xAs Oxidation Layer by Capacitance- Voltage Technique*
Dang, G. ; Luo, B. ; Mehandru, R. ; Ren, F. ; Hobson, W.S. ; Lopata, J. ; Tayahi, M ; Chu, S.N.G. ; Pearton, S.J. ; Chang, W. ; Shen, H.
Pub. info.: State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia.  pp.225-231,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-3
18.

Conference Proceedings
Conference Proceedings
18. Processing of Very Low Dark Current High Speed Infrared Photodetectors for Telecommunication Applications
Mehandru, R. ; Luo, B. ; Ren, F. ; Shen, P. ; Aliberti, K. ; Chu, S. N. G. ; Lothian, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.166-173,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
19.

Conference Proceedings
Conference Proceedings
19. Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
Mehandru, R. ; Dang, G. ; Ip, K.P. ; Kim, S. ; Ren, F. ; Pearton, S.J. ; Hobson, W.S. ; Lopata, J. ; Chang, W.H. ; Shen, H.
Pub. info.: Physics and Simulation of Optoelectronic Devices XI.  pp.323-331,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4986
20.

Conference Proceedings
Conference Proceedings
20. Analysis of InGaAs metal-semiconductor-metal OE mixers
Shen, P.H. ; Aliberti, K. ; Stann, B. ; Newman, P.G. ; Mehandru, R. ; Ren, F.
Pub. info.: Physics and Simulation of Optoelectronic Devices XII.  pp.197-205,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5349