1.

Conference Proceedings
Conference Proceedings
1. Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
Negoro, Y. ; Kimoto, T. ; Matsunami, H. ; Pensl, G.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.843-846,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Epitaxial Growth of 4H-SiC on 4o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
Wada, K. ; Kimoto, T. ; Nishikawa, K. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.219-222,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. SiC Migration Enhanced Embedded Epitaxiat (ME3) Growth Technology
Takeuchi, Y. ; Kataoka, M. ; Kimoto, T. ; Matsunami, H. ; Malhan, R.K.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.251-254,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing
Kimoto, T. ; Kawano, H. ; Noborio, M. ; Suda, J. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.987-990,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. HETEROEPITAXIAL GROWTH OF ANTIPHASE-BOUNDARY FREE CUBIC SiC (100) SINGLE CRYSTALS ON Si (100)
Shibahara, K. ; Nishino, S. ; Matsunami, H.
Pub. info.: Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.183-188,  1987.  Pittsburgh, Penn..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 97
6.

Conference Proceedings
Conference Proceedings
6. *HIGHLY MISMATCHED HETEROEPITAXIAL GROWTH OF CUBIC SiC ON Si
Matsunami, H.
Pub. info.: Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.171-182,  1987.  Pittsburgh, Penn..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 97
7.

Conference Proceedings
Conference Proceedings
7. Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes
Fujiwara, H. ; Kimoto, T. ; Tojo, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.151-154,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
8.

Conference Proceedings
Conference Proceedings
8. Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS
Danno, K. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.355-358,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD
Wada, K. ; Kimoto, T. ; Nishikawa, K. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.85-88,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing
Negoro, Y. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.617-620,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
11.

Conference Proceedings
Conference Proceedings
11. Technological Aspects of Ion Implantation in SiC Device Processes
Negoro, Y. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.599-604,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
12.

Conference Proceedings
Conference Proceedings
12. Short-Channel Effects in 4H-SiC MOSFETs
Noborio, M. ; Kanzaki, Y. ; Suda, J. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.821-824,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
13.

Conference Proceedings
Conference Proceedings
13. Dose Designing fof High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and Fabrication
Kawano, H. ; Kimoto, T. ; Suda, J. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.809-812,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
14.

Conference Proceedings
Conference Proceedings
14. ELECTRICAL PROPERTIES AND HYDROGEN INCORPORATION SCHEME OF a-Si:H/a-Si1-xCx:H MULTILAYERS
Yoshimoto, M. ; Fuyuki, T. ; Matsunami, H.
Pub. info.: Amorphous silicon technology : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.367-374,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 118
15.

Conference Proceedings
Conference Proceedings
15. Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
Nakamura, S. ; Kumagai, H. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.651-654,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
16.

Conference Proceedings
Conference Proceedings
16. Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si
Yoshimoto, M. ; Saraie, J. ; Yasui, T. ; Ha, S. ; Matsunami, H.
Pub. info.: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.145-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 535
17.

Conference Proceedings
Conference Proceedings
17. Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)
Kimoto, T. ; Hashimoto, K. ; Fujihira, K. ; Danno, K. ; Nakamura, S. ; Negoro, Y. ; Matsunami, H.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.3-14,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
18.

Conference Proceedings
Conference Proceedings
18. Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition
Suda, J. ; Nakamura, S. ; Miura, M. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.659-662,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
19.

Conference Proceedings
Conference Proceedings
19. Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)
Negoro, Y. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.783-786,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
20.

Conference Proceedings
Conference Proceedings
20. 4H-SiC MOSFETs on (03-38) Face
Hirao, T. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Shiomi, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1065-1068,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
21.

Conference Proceedings
Conference Proceedings
21. 4H-SiC MOSFETs on (03-38) Face
Hirao, T. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Shiomi, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1065-1068,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
22.

Conference Proceedings
Conference Proceedings
22. Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)
Negoro, Y. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.217-222,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
23.

Conference Proceedings
Conference Proceedings
23. MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation
Kimoto, T. ; Kanzaki, Y. ; Noborio, M. ; Kawano, H. ; Matsunami, H.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.199-204,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
24.

Conference Proceedings
Conference Proceedings
24. Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient
Klettke, O. ; Pensl, G. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.459-462,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
25.

Conference Proceedings
Conference Proceedings
25. 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
Wahab, Q. ; Kosugi, H. ; Yano, H. ; Hallin, C. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1215-1218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
26.

Conference Proceedings
Conference Proceedings
26. Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
Schoener, A. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.451-454,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
27.

Conference Proceedings
Conference Proceedings
27. High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
Negoro, Y. ; Miyamoto, N. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1273-1276,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
28.

Conference Proceedings
Conference Proceedings
28. MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation
Yano, H. ; Kimoto, T. ; Matsunami, H. ; Bassler, M. ; Pensl, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1109-1112,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
29.

Conference Proceedings
Conference Proceedings
29. SiC MISFETs With MBE-grown AIN Gate Dielectric
Zetterling, C. -M. ; Ostling, M. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Linthicum, K. ; Davis, R. F.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1315-1318,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
30.

Conference Proceedings
Conference Proceedings
30. Nuclear Transmutation Doping of Phosphorus into 6H-SiC
Tamura, S. ; Kimoto, T. ; Matsunami, H. ; Okada, M. ; Kanazawa, S. ; Kimura, I.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.849-852,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
31.

Conference Proceedings
Conference Proceedings
31. Growth of SiC on 6H-SiC {0114} Substrates by Gas Source Molecular Beam Epitaxy
Nakamura, S. ; Hatayama, T. ; Kimoto, T. ; Fuyuki, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.201-204,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
32.

Conference Proceedings
Conference Proceedings
32. 4H-SiC (1120) Epitaxial Growth
Kimoto, T. ; Yamamoto, T. ; Chen, Z. Y. ; Yano, H. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.189-192,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
33.

Conference Proceedings
Conference Proceedings
33. Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics
Miyamoto, N. ; Saitoh, A. ; Kimoto, T. ; Matsunami, H. ; Hishida, Y. ; Watanabe, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1347-1350,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
34.

Conference Proceedings
Conference Proceedings
34. Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETS on (1120) Face
Yano, H. ; Hirao, T. ; Kimoto, T. ; Matsunami, H. ; Asano, K. ; Sugawara, Y.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1105-1108,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
35.

Conference Proceedings
Conference Proceedings
35. Sub-um Scale Photoluminescence Image of SiC and GaN at a Low Temperature
Yoshimoto, M. ; Goto, M. ; Saraie, J. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.627-630,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
36.

Conference Proceedings
Conference Proceedings
36. Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer
Onojima, N. ; Suda, J. ; Matsunami, H.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.139-144,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
37.

Conference Proceedings
Conference Proceedings
37. An Overview of SiC Growth
Matsunami, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.125-130,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
38.

Conference Proceedings
Conference Proceedings
38. The Development of 4H-SiC {03-38} Wafers
Nakayama, K. ; Miyanagi, Y. ; Shiomi, H. ; Nishino, S. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.123-126,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
39.

Conference Proceedings
Conference Proceedings
39. Silicon Carbide Technology in New Era
Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.3-8,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
40.

Conference Proceedings
Conference Proceedings
40. Interface States of SiO2/SiC on (11-20) and (0001) Si Faces
Yano, H. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.627-630,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
41.

Conference Proceedings
Conference Proceedings
41. Recent Progress in SiC Epitaxial Growth and Device Processing Technology
Kimoto, T. ; Yano, H. ; Tamura, S. ; Miyamoto, N. ; Fujihira, K. ; Negoro, Y. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.543-548,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
42.

Conference Proceedings
Conference Proceedings
42. Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy
Onojima, N. ; Kaido, J. ; Suda, J. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1569-1572,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
43.

Conference Proceedings
Conference Proceedings
43. 600V 4H-SiC RESURF-Type JFET
Fujikawa, K. ; Harada, S. ; Ito, A. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1189-1192,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
44.

Conference Proceedings
Conference Proceedings
44. Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE
Onojima, N. ; Suda, J. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1457-1460,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
45.

Conference Proceedings
Conference Proceedings
45. SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth
Miura, M. ; Nakamura, S.-i. ; Suda, J. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.859-862,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
46.

Conference Proceedings
Conference Proceedings
46. Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films
Okada, T. ; Kimoto, T. ; Yamai, K. ; Matsunami, H. ; Inoko, F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.521-524,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
47.

Conference Proceedings
Conference Proceedings
47. Recent Achievements and Future Challenges in SiC Homoepitaxial Growth
Kimoto, T. ; Nakazawa, S. ; Fujihira, K. ; Hirao, T. ; Nakamura, S. ; Chen, Y ; Hashimoto, K. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.165-170,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
48.

Conference Proceedings
Conference Proceedings
48. Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD
Fujihira, K. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.175-178,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
49.

Conference Proceedings
Conference Proceedings
49. Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
Nakamura, S. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.183-186,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
50.

Conference Proceedings
Conference Proceedings
50. In-Situ RHEED Analysis During (1-SiC Homoepitaxy on (0001)Si- and (0001)C-Faces by Gas Source Molecular Beam Epitaxy
Hatayama, T. ; Fuyuki, T. ; Nakamura, S. ; Kurobe, K. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.361-364,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)