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79 results

Conference Proceedings

1. Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes

Negoro, Y. ; Kimoto, T. ; Matsunami, H. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.843-846, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Epitaxial Growth of 4H-SiC on 4o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

Wada, K. ; Kimoto, T. ; Nishikawa, K. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.219-222, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. SiC Migration Enhanced Embedded Epitaxiat (ME3) Growth Technology

Takeuchi, Y. ; Kataoka, M. ; Kimoto, T. ; Matsunami, H. ; Malhan, R.K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.251-254, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Improved Dielectric ind Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing

Kimoto, T. ; Kawano, H. ; Noborio, M. ; Suda, J. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.987-990, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. HETEROEPITAXIAL GROWTH OF ANTIPHASE-BOUNDARY FREE CUBIC SiC (100) SINGLE CRYSTALS ON Si (100)

Shibahara, K. ; Nishino, S. ; Matsunami, H.

Pub. info.:	Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.183-188, 1987. Pittsburgh, Penn.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	97

Conference Proceedings

6. *HIGHLY MISMATCHED HETEROEPITAXIAL GROWTH OF CUBIC SiC ON Si

Matsunami, H.

Pub. info.:	Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.171-182, 1987. Pittsburgh, Penn.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	97

Conference Proceedings

7. Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

Fujiwara, H. ; Kimoto, T. ; Tojo, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.151-154, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Danno, K. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.355-358, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

9. Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD

Wada, K. ; Kimoto, T. ; Nishikawa, K. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.85-88, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

10.

Conference Proceedings

10. Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing

Negoro, Y. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.617-620, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

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