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11 results

Conference Proceedings

1. Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Nakamura, S. ; Kumagai, H. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.651-654, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)

Kimoto, T. ; Hashimoto, K. ; Fujihira, K. ; Danno, K. ; Nakamura, S. ; Negoro, Y. ; Matsunami, H.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.3-14, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

3. Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, J. ; Nakamura, S. ; Miura, M. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.659-662, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Growth of SiC on 6H-SiC {0114} Substrates by Gas Source Molecular Beam Epitaxy

Nakamura, S. ; Hatayama, T. ; Kimoto, T. ; Fuyuki, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.201-204, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

5. Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

Kimoto, T. ; Nakazawa, S. ; Fujihira, K. ; Hirao, T. ; Nakamura, S. ; Chen, Y ; Hashimoto, K. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.165-170, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

Nakamura, S. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.183-186, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. In-Situ RHEED Analysis During (1-SiC Homoepitaxy on (0001)Si- and (0001)C-Faces by Gas Source Molecular Beam Epitaxy

Hatayama, T. ; Fuyuki, T. ; Nakamura, S. ; Kurobe, K. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.361-364, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

Nakamura, S. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.183-186, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

Kimoto, T. ; Nakazawa, S. ; Fujihira, K. ; Hirao, T. ; Nakamura, S. ; Chen, Y. ; Hashimoto, K. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.165-170, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Nakamura, S. ; Kumagai, H. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.651-654, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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