1.

Conference Proceedings
Conference Proceedings
1. Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth
Grandjean, N. ; Massies, J. ; Vennegues, P. ; Laugt, M. ; Leroux, M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.67-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular-Beam Epitaxy Using NH3
Grandjean, N. ; Leroux, M. ; Massies, J. ; Mesrine, M. ; Lorenzini, P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.69-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Lefebvre, P. ; Gil, B. ; Allegre, J. ; Bigenwald, P.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G11.7.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Vennegues, P. ; Dalmasso, S. ; Ruterana, P. ; Hirsch, L. ; Barriere, S.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.59.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
Lefebvre, P. ; Gil, B. ; Allegre, J. ; Mathieu, H. ; Grandjean, N. ; Leroux, M. ; Massies, J. ; Bigenwald, P.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.69.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
6.

Conference Proceedings
Conference Proceedings
6. Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature
Semond, F. ; Byrne, D. ; Natali, F. ; Leroux, M. ; Massies, J. ; Antoine-Vincent, N. ; Vasson, A. ; Disseix, P. ; Leymarie, J.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.613-618,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
7.

Conference Proceedings
Conference Proceedings
7. Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE
Leroux, M. ; Beaumont, B. ; Grandjean, N. ; Massies, J. ; Gibart, P.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.695-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
8.

Conference Proceedings
Conference Proceedings
8. From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
Leroux, M. ; Lahreche, H. ; Semond, F. ; Lauegt, M. ; Feltin, E. ; Schnell, N. ; Beaumont, B. ; Gibart, P. ; Massies, J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.795-798,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356