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On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C

Author(s):
Trauwaert,M.-A.
Vanhellemont,J.
Maes,H.E.
Bavel,A.-M.Van
Langouche,G.
Stesmans,A.
Clauws,P.
2 more
Publication title:
Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
Title of ser.:
Materials science forum
Ser. no.:
196-201
Pub. Year:
1995
Pt.:
3
Page(from):
1147
Page(to):
1152
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497164 [0878497161]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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