1.

Conference Proceedings
Conference Proceedings
1. 16 Properties of HfTaxOy High-K Layers Deposited by ALCVD
Zhao, C. ; Rittersma, Z. M. ; Van Berkum, J. G. M. ; Snijders, J. H. M. ; Hendriks, A. ; Breimer, P. ; Groat, P. ; Maes, J. W. ; Wittesr, H. ; Afanas'ev, V. V. ; Tois, E. ; Tuominen, M. ; Caymax, M. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.133-140,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
2.

Conference Proceedings
Conference Proceedings
2. High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies
Caymax, Matty ; Bender, H. ; Brijs, B. ; Conard, T. ; Gendt, S. De ; Delabie, A. ; Heyns, M. ; Onsia, B. ; Ragnarsson, L. ; Richard, O. ; Vandervorst, W. ; Elshocht, S. Van ; Zhao, C. ; Maes, J. W. ; Date, L. ; Pique, D. ; Young, E. ; Tsai, W. ; Shimamoto, Y.
Pub. info.: CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.47-58,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 765