1.

Conference Proceedings
Conference Proceedings
1. High voltage schottky barrier diodes on p-type SiC using metal-overlap on a thick oxide layer as edge termination
Zhang, Q. ; Madangarli, V. ; Soloviev, S. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.75-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
2.

Conference Proceedings
Conference Proceedings
2. Thick oxide layers on N and P SiC wafers by a depo-conversion technique
Zhang, Q. ; Madangarli, V. ; Khlebnikov, I. ; Soloviev, S. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.57-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
3.

Conference Proceedings
Conference Proceedings
3. Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
Zhang, Q. ; Madangarli, V. ; Tarplee, M. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1223-1226,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Computer Simulation of p-Type SiC Schottky Diode using ATLAS
Tarplee, M. ; Madangarli, V. ; Zhang, Q. ; Palmer, P. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1231-1234,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
5.

Conference Proceedings
Conference Proceedings
5. Comparison of Current - Voltage Characteristics of n - and p-Type 6H-SiC Schottky Diodes
Zhang, Q. ; Madangarli, V. ; Gao, Y. ; Sudarshan, T.S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640