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Conference Proceedings

1. Correlation Between Oxide Breakdown and Defects in SiC Wafers

Soloviev, S. ; Khlebnikov, I. ; Madangarli, V. ; Sudarshan, T. S.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.351-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

2. High voltage schottky barrier diodes on p-type SiC using metal-overlap on a thick oxide layer as edge termination

Zhang, Q. ; Madangarli, V. ; Soloviev, S. ; Sudarshan, T. S.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.75-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

3. Thick oxide layers on N and P SiC wafers by a depo-conversion technique

Zhang, Q. ; Madangarli, V. ; Khlebnikov, I. ; Soloviev, S. ; Sudarshan, T. S.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.57-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572