1.

Conference Proceedings
Conference Proceedings
1. High Electric Field Breakdown of 4H-SiC p-n Junction Diodes
Tin, C. C. ; Madangarli, V. ; Hu, R. ; Luckowski, E. ; Casady, J. ; Isaacs-Smith, T. ; Gradinaru, G. ; Sudarshan, T. S. ; Johnson, R. W.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.111-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
2.

Conference Proceedings
Conference Proceedings
2. The Response of High-Voltage 4H-SiC p-n Junction Diodes to Different Edge-Termination Techniques
Oder, T. N. ; Tin, C. C. ; Williams, J. R. ; Isaacs-Smith, T. ; Madangarli, V. ; Sudarshan, T. S.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.101-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512