Impact of Al, Ni, and TiN Metal Gates On ZrO₂-MOS Capacitors

Impact of Al, Ni, and TiN Metal Gates On ZrO₂-MOS Capacitors

Author(s):

S. M. Abermann

Publication title:

Physics and technology of high-k gate dielectrics III

Title of ser.:

ECS transactions

Ser. no.:

1(5)

Pub. Year:

2006

Page(from):

507

Page(to):

516

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

Language:

English

Call no.:

E23400/1-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00047099
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Conf. info. (Number):	3rd
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	2005.10.16-2005.10.21

Similar Items:

1 Conference Proceedings Atomic Layer Deposition of High-κ/Metal Gate Stack MOSFET-Devices on Strained Silicon-on-Insulator Substrates C. Henkel, S. Abermann, O. Bethge, M. Reiche, E. Bertagnolli Electrochemical Society	7 Conference Proceedings Characteristics of Metal Gate MOS Capacitor with Hafnium Oxynitride Thin Film Choi, K.-J., Yoon, S.-G. Electrochemical Society
2 Conference Proceedings Al2O3/ZrO2/Al2O3 High-κ Dielectric Stacks on Germanium Substrates Grown by Atomic Layer Deposition at High and Low Temperatures O. Bethge, S. Abermann, C. Henkel, E. Bertagnolli Electrochemical Society	8 Conference Proceedings ZrO2-TiN Composites S. Salehi, O.V. Biest, J. Vleugels Trans Tech Publications
3 Conference Proceedings Analysis of C-Face 4H-SiC MOS Capacitors with ZrO₂ Gate Dielectric L.S. Chan, Y.H. Chang, K.Y. Lee Trans Tech Publications	9 Conference Proceedings Morphological Studies of Focused Ion Beam Induced Tungsten Deposition Langfischer, H., Harasek, S., Wanzenboeck, H., Lugstein, A., Basnar, B., Bertagnolli, E. Electrochemical Society
4 Conference Proceedings AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric X. Gu, N. Izyumskaya, V. Avrutin, J. Xie, S. Chevtchenko, B. Xiao, H. Morkoc SPIE - The International Society of Optical Engineering	10 Conference Proceedings Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor J.H. Xia, D.M. Martin, S.S. Suvanam, C.M. Zetterling, M. Östling Trans Tech Publications
5 Conference Proceedings ZrO2 as Dielectric Material for Device Characterization with Scanning Capacitance Microscopy Brezna, W., Harasek, S., Enichlmair, H., Bertagnolli, E., Gornik, E., Smoliner, J. SPIE-The International Society for Optical Engineering	11 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society
6 Conference Proceedings ZrO2 as Dielectric Material for Device Characterization with Scanning Capacitance Microscopy Brezna, W., Harasek, S., Enichimair, H, Bertagnolli, E., Gornik, E., Smoliner, J. Electrochemical Society	12 Conference Proceedings Advanced TiN Metal-Gate FinFET Technology Y. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, I. Kenichi, T. Shimizu, H. Yamauchi, S. Ouchi, E. Suzuki Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12