1.

Conference Proceedings
Conference Proceedings
1. Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-κ Stacks
N. Van der Heyden ; G. Pourtois ; S. De Gendt ; M. Heyns ; A. Stesmans
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.135-143,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. A Step Towards a Better Understanding of Silicon Passivated (100)Ge p- Channel Devices
G. Pourtois ; M Houssa ; B. De Jaeger ; F. Leys ; B. Kaczer ; K. Martens ; M. Caymax ; M. Meuris ; G. Groeseneken ; M. Heyns
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.53-64,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)