1.

Conference Proceedings
Conference Proceedings
1. HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle
L. Nyns ; A. Delabie ; M. Caymax ; M.M. Heyns ; S. Van Elshocht
Pub. info.: Atomic layer deposition applications 4.  pp.257-267,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(4)
2.

Conference Proceedings
Conference Proceedings
2. Screening of High-κ Layers in MIS and MIM Capacitors Using Aqueous Chemical Solution Deposition
S. Van Elshocht ; A. Hardy ; C. Adelmann ; M. Caymax ; T. Conard
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.299-310,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
3.

Conference Proceedings
Conference Proceedings
3. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation
V. S. Kaushik ; K. Rohr ; S. Hyun ; S. De Gendt ; S. Van Elshocht ; A. Debbie ; J. Everoert ; A. Veboso ; S. Brus ; L. Ragnarason ; O. Richard ; M. Caymax ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.305-312,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
4.

Conference Proceedings
Conference Proceedings
4. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide
A. Debbie ; M. Caymax ; S. Brijs ; D. Brunco ; T. Conard ; E. Sleeckx ; L. Ragnarsson ; S. Van Elshocht ; S. De Gendt ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.433-446,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)