1.

Conference Proceedings
Conference Proceedings
1. First-Principles Investigation of (100)Ge/Ge(Hf)O2 Interfaces
M. Houssa ; G. Pourtois ; F. Bellenger ; M. Caymax ; M. Meuris
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.471-478,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide
F. Bellenger ; M. Houssa ; A. Delabie ; T. Conard ; M. Caymax
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.451-459,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
3.

Conference Proceedings
Conference Proceedings
3. Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications
A. Delabie ; L. Nyns ; F. Bellenger ; M. Caymax ; T. Conard
Pub. info.: Atomic layer deposition applications 3.  pp.227-241,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(7)
4.

Conference Proceedings
Conference Proceedings
4. Interface Properties Improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 Gate Stacks using Molecular Beam Deposition
F. Bellenger ; C. Merckling ; J. Penaud ; M. Houssa ; M. Caymax
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.411-422,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)