Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists

Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists

Author(s):

Conley,W. ( Cypress Semiconductor Corp. )

Babcock,C.P. ( Cypress Semiconductor Corp. )

Farrar,N.R. ( Hewlett-Packard Co. )

Liu,H.-Y. ( Hewlett-Packard Co. )

Peterson,B. ( JSR Microelectronics,Inc. )

Taira,K. ( JSR Microelectronics,Inc. )

1 more

Publication title:

Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3333

Pub. Year:

1998

Vol.:

Part 1

Page(from):

357

Page(to):

365

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427786 [0819427780]

Language:

English

Call no.:

P63600/3333

Type:

Conference Proceedings

Details

TDL ID:	ZA00018317
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	1998 : 15th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.23-1998.02.25

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