An In0.6Ga0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K

An In0.6Ga0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K

Author(s):

Jiang, L. ( Univ. of Florida (USA) )
Li, S.S. ( Univ. of Florida (USA) )
Yeh, N.-T. ( National Central Univ. (Taiwan) )
Chyi, J.-I. ( National Central Univ. (Taiwan) )

Publication title:

Infrared technology and applications XXIX : 21-25 April 2003, Orlando, Florida, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5074

Pub. Year:

2003

Page(from):

677

Page(to):

684

Pages:

8

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449337 [0819449334]

Language:

English

Call no.:

P63600/5074

Type:

Conference Proceedings

Details

TDL ID:	ZA00013062
Series ID:	PA00000029
Conf. info. (Name):	Defense, Security, and Sensing : Infrared Technology and Applications
Conf. info. (Number):	2003 : 29th
Conf. info. (Venue):	Oriando, FL, USA
Conf. info. (Date):	2003.04.21-2003.04.25

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