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Conference Proceedings

1. Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1349-1352, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L. ; Ryu, S.H. ; Shur, M.S.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.743-746, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

3. Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors

Agarwal, A.K. ; Ivanov, P.A. ; Levinshtein, M.E. ; Palmour, J.W. ; Rumyantsev, S.L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1349-1352, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Generation-recombination noise in GaN and GaN-based devices (Invited Paper)

Pala, N. ; Rumyantsev, S.L. ; Shur, M.S. ; Levinshtein, M.E. ; Khan, M.A. ; Simin, G.S. ; Gaska, R.

Pub. info.:	Noise in Devices and Circuits. pp.217-231, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5113